相关论文: Half-metallic ferromagnets for magnetic tunnel jun…
We present ab initio calculations of the evolution of anisotropic magnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnel regime. We find an extraordinary enhancement of AMR, compared to bulk, in two scenarios. In…
The recent emergence of van der Waals (vdW) ferromagnets has opened new opportunities for designing spintronic devices. We theoretically investigate the coherent spin-dependent transport properties of the vdW ferromagnet Fe$_4$GeTe$_2$, by…
Half-metallic ferrimagnetism is crucial for spintronic applications with respect to ferromagnets due to the lower stray fields created by these materials. Studying the effect of defects in CrAs and related transition-metal chalcogenides and…
Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were…
The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
Emerging altermagnets with zero net magnetic moment and moment-dependent spin splitting offer a promising avenue for antiferromagnetic spintronic devices, yet their integration into magnetic tunnel junctions has been hindered by reliance on…
Topologically protected fermionic quasiparticles occur in metals with band degeneracy as a consequence of band structure topology. Here we unveil topological semimetal and metal phases in a variety of non-symmorphic collinear…
We present a theory for resonance-tunneling magnetoresistance (MR) in Ferromagnetic-Insulator-Nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather…
Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an…
We report on first-principles calculations of multilayers of zinc-blende half-metallic ferromagnets CrAs and CrSb with III-V and II-VI semiconductors, in the [001] orientation. We examine the ideal and tetragonalised structures, as well as…
We investigated the spin-dependent transport properties of Fe/MgAl2O4/Fe(001) magnetic tunneling junctions (MTJs) on the basis of first-principles calculations of the electronic structures and the ballistic conductance. The calculated…
Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles calculations (Sakamoto et al., Ref. 9) suggested that the…
We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct…
Extremely large non-saturating magnetoresistance has recently been reported for a large number of both topologically trivial and non-trivial materials. Different mechanisms have been proposed to explain the observed magnetotransport…
We study the behaviour of the magnetization in a half-metallic ferromagnet/nonmagnetic insulator/ferromagnetic metal/paramagnetic metal (FM1/NI/FM2/PM) tunnel junction. It is calculated self-consistently within the nonequilibrium Keldysh…
We theoretically design a graphene-based all-organic ferromagnetic semiconductor by terminating zigzag graphene nanoribbons (ZGNRs) with organic magnets. A large spin-split gap with 100% spin polarized density of states near the Fermi…
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…
We propose a theoretical model for an all-Heusler magnetic tunnel junction that uses two Heusler compounds: Fe$_2$CrSi and Fe$_2$TiSi, both of which can be experimentally synthesized. Fe$_2$CrSi is a half-metallic ferromagnet, making it a…
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…