相关论文: Ion Beam Synthesis of embedded SiC

Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simulate ion beam induced amorphization. Structural properties…

Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken…

Varying the amounts of silicon and carbon, different composites have been prepared by ball milling of Si, Ni$_{3.4}$Sn$_4$, Al and C. Silicon and carbon contents are varied from 10 to 30 wt.% Si, and 0 to 20 wt.% C. The microstructural and…

Cold atom ion sources have been developed and commercialized as alternative sources for focused ion beams (FIB). So far, applications and related research have not been widely reported. In this paper, a prototype rubidium FIB is used to…

Localized basis ab initio molecular dynamics simulation within the density functional framework has been used to generate realistic configurations of amorphous silicon carbide (a-SiC). Our approach consists of constructing a set of smart…

Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of…

A model of interstitial impurity migration is proposed which explains the redistribution of ion-implanted boron in low-temperature annealing of nonamorphized silicon layers. It is supposed that nonequilibrium boron interstitials are…

Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. However, given the processing incompatibilities of different platforms, a formidable challenge in the field of…

The synthesis of Si3N4 nanowires from the reaction of silicon nanoparticles with N2 in the 1200-1440 C temperature range is reported. The nitridation conditions are such that the reaction with nitrogen is favoured by the presence of silicon…

Silicon carbide (SiC) planar PiN diodes from two different manufacturers were irradiated with 252.7 MeV protons from a medical synchrotron. Over the course of two 8h irradiation shifts, the samples were exposed to increasing fluences…

During the first charge-discharge cycle, silicon-based batteries show an important capacity loss because of the formation of the solid electrolyte interphase (SEI) and morphological changes due to expansion-contraction sequence upon…

We have produced synthetic analogues of cosmic silicates using the Sol Gel method, producing amorphous silicates of composition Mg(x)Ca(1-x)SiO3. Using synchrotron X-ray powder diffraction on Beamline I11 at the Diamond Light Source,…

Pressure-induced phase transformation occurs during silicon (Si) wafering processes. \b{eta}-tin (Si-II) phase is formed at high pressures, followed by the transformation to Si-XII, Si-III or/and amorphous Si ({\alpha}-Si) phases during the…

Using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), scanning tunnelling microscopy (STM) and high resolution photo-electron spectroscopy (HR-PES) techniques we have studied the annealing effect of one silicon…

We have achieved stimulated laser cooling of thermal rubidium atomic beams on a silicon chip. Following pre-collimation via a silicon microchannel array, we perform beam brightening via a blue-detuned optical molasses. Owing to the small…

The deposition of boron-doped amorphous carbon thin films on SiO2 substrate was achieved via a focused ion beam-assisted chemical vapor deposition of triphenyl borane (C18H15B) and triphenyl borate (C18H15BO3). The existence of boron in the…

Superconductor based quantum computing has the major drawback of working temperatures which require liquid helium for cooling. A promising approach to overcome this obstacle for quantum technologies is based on deep level defects in…

We report on experimental evidence for the formation of a two dimensional Si/Au(110) surface alloy. In this study, we have used a combination of scanning tunneling microscopy, low energy electron diffraction, Auger electron spectroscopy and…

Using low energy electron diffraction (LEED), scanning tunnelling microscopy (STM) and x-ray absorption spectroscopy (XAS) techniques, we have studied the first steps of silicon adsorption onto Cu (001) single crystal substrate. For low…

The fabrication, initial structural characterization and diode measurements are reported for the first boron carbide / silicon carbide heterojunction diode. Current-voltage curves obtained for operation at temperatures from 24 C to 388 C.…