相关论文: Angular Dependence of Spin-Torque Critical Current…
It is shown that the maximum stable output of a CPP-GMR sensor is increased significantly by using a synthetic ferrimagnet free layer, provided the electron current flows from free layer to reference layer. This free layer allows a larger…
We have developed a self-aligned, high-yield process to fabricate CPP (current perpendicular to the plane) magnetic sensors of sub 100 nm dimensions. A pinned synthetic antiferromagnet (SAF) is used as the reference layer which minimizes…
We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance…
Spin-transfer torque (STT) in magnetoresistance devices has enabled key applications such as STT-magnetoresistive random access memory, spin torque oscillators, and energy-assisted magnetic recording. In the device structures, where a free…
Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the…
Various applications of superconducting materials require accounting of anisotropy of the current-carrying capacity relative to magnetic field direction - Ic({\theta}). However, today there is no sufficiently comprehensive model that takes…
In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, we have investigated spin transfer effects in complex spin-valve pillars with a diameter of 130nm developed for current-perpendicular to the plane (CPP)…
The critical current needed to destabilize the magnetization of a perpendicular ferromagnet via the spin Hall effect is studied. Both the dampinglike and fieldlike torques associated with the spin current generated by the spin Hall effect…
Numerical models for computing the effective critical current of devices made of HTS tapes require the knowledge of the Jc(B,theta) dependence, i.e. of the way the critical current density Jc depends on the magnetic flux density B and its…
The dependence of the critical current of spin transfer torque-driven magnetization dynamics on the free-layer thickness was studied by taking into account both the finite penetration depth of the transverse spin current and spin pumping.…
Critical current density of composite free layer (CFL) in magnetic tunneling junction is investigated. CFL consists of two exchange coupled ferromagnetic layers, where the coupling is parallel or anti-parallel. Instability condition of the…
We develop a high-throughput method for measuring the composition dependence of magnetoresistance (MR) and spin-transfer-torque (STT) effects in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices and report its…
We discuss a spin-transfer torque device, where the role of the soft ferromagnetic layer is played by a magnetic particle or a magnetic molecule, in weak tunnel contact with two spin polarized leads. We investigate if the magnetization of…
We develop a macroscopic description of the current-induced torque due to spin transfer in a layered system consisting of two ferromagnetic layers separated by a nonmagnetic layer. The description is based on i) the classical spin diffusion…
We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a…
The critical current of the spin transfer torque-driven magnetization dynamics was studied by taking into account both spin pumping and the finite penetration depth of the transverse spin current. We successfully reproduced the recent…
Using a first-principles noncollinear wave-function-matching method, we studied the spin-transfer torques (STTs) in CoFe/Mg-B-O/CoFe(001) magnetic tunnel junctions (MTJs), where three different types of B-doped MgO in the spacer are…
We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability…
Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properties based on the relative angle between the magnetization…
Based on Keldysh's nonequilibrium Green function method, the spin-dependent transport properties in a ferromagnet-quantum dot (QD)-ferromagnet coupled system are investigated. It is shown the spin current shows quite different…