相关论文: Nonmonotonic Temperature Dependence of the Hall Re…

The low temperature longitudinal resistance-per-square Rxx(T) in ungated GaAs/AlGaAs quantum wells of high peak hole mobility 1.7x10^6 cm^2/Vs is metallic for 2D hole density p as low as 3.8x10^9 cm-2. The electronic contribution to the…

We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…

We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have…

We report the temperature($T$) and perpendicular magnetic field($B$) dependence of the Hall resistivity $\rho_{xy}(B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low $B$ Hall…

Linear temperature dependence of transport coefficients in metals is often ascribed to non-Fermi-liquid physics. Here we demonstrate the $T$-linear behavior of nonlocal conductivity in a clean 2D electron fluid, where carrier collisions…

We report a highly unusual temperature dependence in the magnetoresistance of a weakly interacting high mobility 2D electron gas (2DEG) under a parallel magnetic field and when the current is perpendicular to the field. While the linear…

Polycrystalline samples of LaNi2(Ge{1-x}P{x})2 (x = 0, 0.25, 0.50, 0.75, 1) were synthesized and their properties investigated by x-ray diffraction (XRD), heat capacity Cp, magnetic susceptibility chi, and electrical resistivity rho…

Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers.…

In a high mobility two-dimensional electron system in Si, near the critical density, $n_c=0.32\times10^{11}$cm$^{-2}$, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature ($T$) dependence around the…

The presence of strong disorder can significantly impact electrical conduction in metallic systems. Here, we investigate the temperature dependence of the electrical resistivity, $\rho(T)$, in nonmagnetic single crystals of the…

We report anomalous physical properties of single-crystalline FeSi over a wide temperature range 1.8-400 K. X-ray diffraction, specific heat, and magnetization measurements indicate that the FeSi crystals synthesized in this study are of…

This paper is devoted to the temperature dependence of the resistivity in Si- MOS samples over the wide range of densities in the ``metallic phase'' (n>n_c) but not too close to the critical density n_c. Three domains of different behavior…

Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to…

We study the resistivity of three-dimensional semimetals with linear dispersion in the presence of on-site electron-electron interaction. The well-known quadratic temperature dependence of the resistivity of conventional metals is turned…

We propose a model for the non-Fermi behavior in the proximity of the quantum phase transition induced by the strong polarization of the electrons due to local magnetic moments. The self - consistent Renormalization - Group methods have…

The resistivity $\rho$ of high mobility dilute 2D holes in GaAs exhibits a peak at a certain temperature $T^*$ in zero magnetic field($B$=0). In the $T>T^*$ regime where d$\rho$/d$T<$0, we observe for the first time both the $\nu=1$ quantum…

This work reports longitudinal (RXX) and transverse (RXY) resistance as a function of the temperature measured at low magnetic fields for a Y0.55Pr0.45Ba2Cu3O7-d polycrystalline sample. It is observed nonzero transverse voltage at zero…

We present measurements of the temperature dependence of electrical resistivity of CeRhSn up to ~ 27 kbar. At low temperatures, the electrical resistivity varies linearly with temperature for all pressures, indicating non-Fermi liquid…

We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…

We develop a systematic theory of the Hall effect in Q1D conductors in both weak and strong magnetic fields for a model where the electron relaxation time varies over the Fermi surface. At high temperatures, the Hall coefficient saturates…