相关论文: Kondo-temperature dependence of the Kondo splittin…
We report Kondo resonances in the conduction of single-molecule transistors based on transition metal coordination complexes. We find Kondo temperatures in excess of 50 K, comparable to those in purely metallic systems. The observed gate…
We measure the spin splitting in a magnetic field $B$ of localized states in single-electron transistors using a new method, inelastic spin-flip cotunneling. Because it involves only internal excitations, this technique gives the most…
We have used an electromigration technique to fabricate C$_{60}$-based single-molecule transistors. We detail the process statistics and the protocols used to infer the successful formation of a single-molecule transistor. At low…
We have measured the magnetic splitting, $\Delta_K$, of a Kondo peak in the differential conductance of a Single-Electron Transistor while tuning the Kondo temperature, $T_K$, along two different paths in the parameter space: varying the…
We present a Qantum Monte Carlo (QMC) study of the temperature dependent dynamics of the Kondo insulator. Working at the so-called symmetrical point allows to perform minus-sign free QMC simulations and thus reach temperatures of less than…
We theoretically and experimentally study the universal scaling property of the spin-1/2 Kondo state in the magnetic field dependence of bias-voltage linear conductance through a quantum dot at low temperatures. We discuss an efficient and…
We develop a general method to evaluate the Kondo temperature in a multilevel quantum dot that is weakly coupled to conducting leads. Our theory reveals that the Kondo temperature is strongly enhanced when the intradot energy-level spacing…
Determination of the molecular Kondo temperature $T_K$ poses a challenge in most cases when the experimental temperature cannot be tuned to a sufficient extent. We show how this ambiguity can be resolved if additional control parameters are…
The tunneling conductance is calculated as a function of the gate voltage in wide temperature range for the single quantum dot systems with Coulomb interaction. We assume that two orbitals are active for the tunneling process. We show that…
We analyze the time-dependent formation of the spectral function of an Anderson impurity model in the Kondo regime within a numerically exact real-time quantum Monte Carlo framework. At steady state, splitting of the Kondo peak occurs with…
We present gate-dependent transport measurements of Kondo impurities in bare gold break junctions, generated with high yield using an electromigration process that is actively controlled. Thirty percent of measured devices show zero-bias…
We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the…
Highly disordered superconductors have a rich phase diagram. At a moderate magnetic field (B) the samples go through the superconductor-insulator quantum phase transition. In the insulating phase, the resistance increases sharply with B up…
We review the mechanisms of low-temperature electron transport across a quantum dot weakly coupled to two conducting leads. Conduction in this case is controlled by the interaction between electrons. At temperatures moderately lower than…
Using a time-dependent Anderson Hamiltonian, a quantum dot with an ac voltage applied to a nearby gate is investigated. A rich dependence of the linear response conductance on the external frequency and driving amplitude is demonstrated. At…
We consider a strongly interacting quantum dot connected to two leads held at quite different temperatures. Our aim is to study the behavior of the Kondo effect in the presence of large thermal biases. We use three different approaches,…
We study thermal conductance and thermopower of a metallic single-electron transistor beyond the limit of weak tunnel coupling. Employing both a systematic second-order perturbation expansion and a non-perturbative approximation scheme, we…
We employ the time-dependent non-crossing approximation to study the time averaged conductance for a single electron transistor in the Kondo regime when the dot level is sinusoidally driven from its equilibrium position by means of a gate…
We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a…
We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo…