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We present a systematic methodology for the accurate calculation of defect structures in supercells which we illustrate with a study of the neutral vacancy in silicon. This is a prototypical defect which has been studied extensively using…

材料科学 · 物理学 2009-11-10 M. I. J. Probert , M. C. Payne

Ab initio simulations are capable of providing detailed information of material behavior at the nanoscale. Simulating experimentally relevant situations is, however, often computationally intense. Using hybrid approaches between ab initio…

计算物理 · 物理学 2019-03-26 Michael Sluydts , Michiel Larmuseau , Johan Lauwaert , Stefaan Cottenier

This chapter reviews the different methodological aspects of the ab ini-tio modeling of dislocations. Such simulations are now frequently used to study the dislocation core, i.e. the region in the immediate vicinity of the line defect where…

材料科学 · 物理学 2019-01-08 Emmanuel Clouet

Modeling point defects at an atomic scale requires careful treatment of the long-range atomic relaxations. This elastic field can strongly affect point defect properties calculated in atomistic simulations because of the finite size of the…

材料科学 · 物理学 2013-10-23 Céline Varvenne , Fabien Bruneval , Mihai-Cosmin Marinica , Emmanuel Clouet

We have used tight-binding molecular-dynamics simulations to investigate the role of point defects (vacancies and interstitials) on structural relaxation in amorphous silicon. Our calculations give unambiguous evidence that point defects…

材料科学 · 物理学 2007-05-23 Cristiano L. Dias , Laurent J. Lewis , S. Roorda

Ab initio theory describes nuclei from a fully microscopic formulation, with no presupposition of collective degrees of freedom, yet signatures of clustering and rotation nonetheless arise. We can therefore look to ab initio theory for an…

核理论 · 物理学 2019-12-24 M. A. Caprio , P. J. Fasano , A. E. McCoy , P. Maris , J. P. Vary

The structural and electronic properties of amorphous silicon ($a$-Si) are investigated by first-principles calculations based on the density-functional theory (DFT), focusing on the intrinsic structural defects. By simulated melting and…

材料科学 · 物理学 2017-10-11 Yoritaka Furukawa , Yu-ichiro Matsushita

We present a method for calculating ab initio interatomic forces which scales quadratically with the size of the system and provides a physically transparent representation of the force in terms of the spatial variation of the electronic…

mtrl-th · 物理学 2008-02-03 C. Wei , Steven P. Lewis , E. J. Mele , Andrew M. Rappe

Refractory metals exhibit high strength at high temperature, but often lack ductility. Multiprinciple element alloys such as high entropy alloys offer the potential to improve ductility while maintaining strength, but we don't know…

材料科学 · 物理学 2023-12-07 Vishnu Raghuraman , Saro San , Michael C. Gao , Michael Widom

We present an extensive first-principles study of the pressure dependence of the formation enthalpies of all the know vacancy and self-interstitial configurations in silicon, in each charge state from -2 through +2. The neutral vacancy is…

A phenomenological model was developed to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation, the kinetics of their evolution toward equilibrium and their influence on…

高能物理 - 唯象学 · 物理学 2009-11-07 Ionel Lazanu , Sorina Lazanu

Locally, the atomic structure in well annealed amorphous silicon appears similar to that of crystalline silicon. We address here the question whether a point defect, specifically a vacancy, in amorphous silicon also resembles that in the…

材料科学 · 物理学 2020-02-26 Andreas Pedersen , Laurent Pizzagalli , Hannes Jonsson

We provide a methodology for generating interatomic potentials for use in classical molecular dynamics simulations of atomistic phenomena occurring at energy scales ranging from lattice vibrations to crystal defects to high energy…

材料科学 · 物理学 2009-12-03 Pratyush Tiwary , Axel van de Walle , Niels Grønbech-Jensen

Due to their technological importance, point defects in silicon are among the best studied physical systems. The experimental examination of point defects buried in bulk is difficult and evidence for the various defects usually indirect.…

材料科学 · 物理学 2009-11-07 Stefan Goedecker , Luc Billard , Thierry Deutsch

We present a tight-binding calculation that, for the first time, accurately describes the structural, vibrational and elastic properties of amorphous silicon. We compute the interatomic force constants and find an unphysical feature of the…

材料科学 · 物理学 2009-11-10 J. L. Feldman , N. Bernstein , D. A. Papaconstantopoulos , M. J. Mehl

Energy dissipation by fast crystalline defects takes place mainly through the resonant interaction of their cores with periodic lattice. We show that the resultant effective friction can be reduced to zero by appropriately tuned acoustic…

介观与纳米尺度物理 · 物理学 2020-11-11 N. Gorbushin , G. Mishuris , L. Truskinovsky

This paper presents a large-scale $ab$ $initio$ simulation study of amorphous silicon hydride ($a$-Si$_{\text{1-x}}$H$_{\text{x}}$) with an emphasis on the structure and properties of the material across a range of hydrogen concentration by…

材料科学 · 物理学 2023-09-19 Raymond Atta-Fynn , Somilkumar J. Rathi , Harsh Arya , Parthapratim Biswas

We introduce an approach to exploit the existence of multiple levels of description of a physical system to radically accelerate the determination of thermodynamic quantities. We first give a proof of principle of the method using two…

材料科学 · 物理学 2009-10-31 T. D. Engeness , T. A. Arias

Plasticity in zirconium is controlled by 1/3<1-210> screw dislocations gliding in the prism planes of the hexagonal close-packed structure. This prismatic and not basal glide is observed for a given set of transition metals like zirconium…

材料科学 · 物理学 2012-10-04 Emmanuel Clouet

Using first principles molecular dynamics simulations, we have determined the threshold displacement energies and the associated created defects in cubic silicon carbide. Contrary to previous studies using classical molecular dynamics, we…

材料科学 · 物理学 2007-09-12 Guillaume Lucas , Laurent Pizzagalli
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