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Similar to atoms and nuclei, semiconductor quantum dots exhibit formation of shells. Predictions of magnetic behavior of the dots are often based on the shell occupancies. Thus, closed-shell quantum dots are assumed to be inherently…

介观与纳米尺度物理 · 物理学 2011-06-14 R. Oszwałdowski , I. Žutić , A. G. Petukhov

Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this article, we present our results on…

In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost of an increased surface area. Here we show that such a…

The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states…

介观与纳米尺度物理 · 物理学 2009-11-10 M. Valin-Rodriguez , A. Puente , L. Serra

Electronic coupling and hence hybridization of atoms serve as the basis for the rich properties of the endless library of naturally occurring molecules. Colloidal quantum dots (CQDs) manifesting quantum strong confinement, possess atomic…

介观与纳米尺度物理 · 物理学 2021-03-09 Somnath Koley , Jiabin Cui , Yossef E. Panfil , Uri Banin

Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow…

介观与纳米尺度物理 · 物理学 2009-11-10 M. Sigrist , A. Fuhrer , T. Ihn , K. Ensslin , D. C. Driscoll , A. C. Gossard

The prospect of coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting…

In this paper we present a detailed analysis of the atomic and electronic structure of GaAs nanowires using first-principles pseudopotential calculations. We consider six different types of nanowires with different diameters all grown along…

材料科学 · 物理学 2010-12-24 S. Cahangirov , S. Ciraci

The MBE grown Si$_{1-x}$Ge$_x$ islands on reconstructed high index surfaces, such as, Si(5 5 12), Si(5 5 7) and Si(5 5 3) show a universality in the shape evaluation and the growth exponent parameters, \emph{irrespective} of the substrate…

材料科学 · 物理学 2012-10-08 J. K. Dash , T. Bagarti , A. Rath , R. R. Juluri , P. V. Satyam

Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light…

Molecular states in a SINGLE PAIR of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We…

介观与纳米尺度物理 · 物理学 2007-05-23 T. Ota , M. Stopa , M. Rontani , T. Hatano , K. Yamada , S. Tarucha , H. Z. Song , Y. Nakata , T. Miyazawa , T. Ohshima , N. Yokoyama

The ability to assemble nanomaterials, such as quantum dots, enables the creation of functional devices that present unique optical and electronic properties. For instance, light-emitting diodes with exceptional color purity can be printed…

软凝聚态物质 · 物理学 2015-11-19 Yong Lin Kong , François Boulogne , Hyoungsoo Kim , Janine Nunes , Jie Feng , Howard A. Stone

We investigate a system of three tunnel-coupled semiconductor quantum dots in a triangular geometry, one of which is connected to a metallic lead, in the regime where each dot is essentially singly occupied. Both ferro- and…

强关联电子 · 物理学 2015-12-22 Andrew K. Mitchell , Thomas F. Jarrold , David E. Logan

Surface probes such as scanning tunneling microscopy (STM) have detected complex patterns at the nanoscale, indicative of electronic inhomogeneity, in a variety of high temperature superconductors. In cuprates, the pattern formation is…

超导电性 · 物理学 2011-03-22 B. Phillabaum , E. W. Carlson , K. A. Dahmen

Statistical properties of the single electron levels confined in the semiconductor (InAs/GaAs, Si/SiO2) double quantum dots (DQDs) are considered. We demonstrate that in the electronically coupled chaotic quantum dots the chaos with its…

介观与纳米尺度物理 · 物理学 2015-05-19 Igor Filikhin , Sergei Matinyan , Branislav Vlahovic

Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si…

介观与纳米尺度物理 · 物理学 2015-05-13 Yongjie Hu , Hugh H. O. Churchill , David J. Reilly , Jie Xiang , Charles M. Lieber , Charles M. Marcus

Continued advances in quantum technologies rely on producing nanometer-scale wires. Although several state-of-the-art nanolithographic technologies and bottom-up synthesis processes have been used to engineer such wires, critical challenges…

Structured quantum light is crucial for high-dimensional quantum information processing, yet its direct generation from quantum emitters remains challenging due to their intrinsic locality and omnidirectional radiation. Metasurfaces have…

Basic concepts of quantum integrable systems (QIS) are presented stressing on the unifying structures underlying such diverse models. Variety of ultralocal and nonultralocal models is shown to be described by a few basic relations defining…

solv-int · 物理学 2007-05-23 Anjan Kundu

This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs are observed by atom probe tomography, which…