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相关论文: Structure and growth of titanium buffer layers on …

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Bi(0001) films with thicknesses up to several bilayers (BLs) are grown on Se-terminated Bi$_2$Se$_3$(0001) surfaces, and low energy electron diffraction (LEED), low energy ion scattering (LEIS) and atomic force microscopy (AFM) are used to…

材料科学 · 物理学 2018-08-01 Haoshan Zhu , Weimin Zhou , Jory A. Yarmoff

We show that reflection high-energy electron diffraction (RHEED) can be used as a highly sensitive tool to track surface and resulting film stoichiometry in adsorption-limited molecular beam epitaxy of (001) SrTiO3 thin films. Even under…

材料科学 · 物理学 2015-03-17 Adam P. Kajdos , Susanne Stemmer

The heteroepitaxial growth of Re (0001) films on Nb (110) surfaces has been investigated. Nb/Re bilayers were grown on A-plane sapphire -- alpha-Al2O3 (11-20) -- by molecular beam epitaxy. While Re grew with a (0001) surface, the in-plane…

材料科学 · 物理学 2010-11-23 Paul B. Welander

Alumina (Al$_{2}$O$_{3}$) is a key material for thin-film growth and heterogeneous catalysis, where the atomic surface structure critically impacts performance. Using noncontact atomic force microscopy (nc-AFM) combined with density…

We investigate the complex relationship between the growth conditions and the structural and transport properties of $\mathrm{Ti_xO_y}$ thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to…

Homogeneous face-centered cubic (fcc) polycrystalline CoCrFeNi films were deposited at room temperature on (0001)alpha-Al2O3 (c-sapphire). Phase and morphological stability of 200 to 670 nm thick films were investigated between 973 K and…

The surface structure of SrTiO3(001) thin films homoepitaxially grown by PLD in step-flow mode was characterized using low temperature STM. It was found that one-dimensional (1D) TiOx-based nanostructures were formed on the thin film…

材料科学 · 物理学 2015-05-18 Katsuya Iwaya , Takeo Ohsawa , Ryota Shimizu , Tomihiro Hashizume , Taro Hitosugi

Using spin-density functional theory we investigated various possible structures of the hematite (0001) surface. Depending on the ambient oxygen partial pressure, two geometries are found to be particularly stable under thermal equilibrium:…

We present the temperature- and thickness-dependent structural and morphological evolution of strain induced transformations in highly-strained epitaxial BiFeO3 films deposited on LaAlO3 (001) substrates. Using high-resolution X-ray…

材料科学 · 物理学 2015-05-30 Anoop R. Damodaran , Sungki Lee , Karthik Jambunathan , Scott MacClaren , Lane W. Martin

We have investigated the growth of BaTiO3 thin films deposited on pure and 1% Nb-doped SrTiO3(001) single crystals using atomic oxygen assisted molecular beam epitaxy (AO-MBE) and dedicated Ba and Ti Knudsen cells. Thicknesses up to 30 nm…

材料科学 · 物理学 2015-06-12 A. Barbier , C. Mocuta , D. Stanescu , P. Jegou , N. Jedrecy , H. Magnan

Stoichiometric, epitaxial LaCrO3 films have been grown on TiO2-terminated SrTiO3(001) substrates by molecular beam epitaxy using O2 as the oxidant. Film growth occurred in a layer-by-layer fashion, giving rise to structurally excellent…

材料科学 · 物理学 2015-05-28 L. Qiao , T. C. Droubay , M. E. Bowden , V. Shutthanandan , T. C. Kaspar , S. A. Chambers

Transition metal aluminum nitrides are a technologically important class of multifunctional ceramics, however, the HfAlN system remains largely unexplored. We investigate phase stability, nanostructure design, and mechanical behavior of…

The epitaxial deposition of the first oxide buffer layer (seed layer) on biaxially textured Ni tape for coated conductors is a critical step that is dependent on the atomistic surface condition of the metal. We present a study of the…

超导电性 · 物理学 2007-05-23 C. Cantoni , D. K. Christen , R. Feenstra , A. Goyal , G. W. Ownby , D. M. Zehner , D. P. Norton

Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…

等离子体物理 · 物理学 2015-06-16 Marina Prenzel , Annika Kortmann , Adrian Stein , Achim von Keudell , Farwah Nahif , Jochen M. Schneider

The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different…

Epitaxial Ba0.5Sr0.5TiO3 thin films grown on the (001) LaAlO3 substrates with the ferroelectric transition of about 250K have been investigated by TEM and off-axis electron holography. Cross-sectional TEM observations show that the…

材料科学 · 物理学 2009-11-10 H. F. Tian , H. C. Yu , X. H. Zhu , Y. G. Wang , D. N. Zheng , H. X. Yang , J. Q. Li

Vanadium silicide (V$_3$Si) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the resulting superconducting properties and are not yet fully…

We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and…

We investigated the initial growth of TiTe$_2$ on Au(111) from sub-monolayer to multi-layer coverage by scanning tunneling microscopy (STM), low-energy electron diffraction intensity analysis (LEED-IV), and density functional theory (DFT).…

As titanium is a highly utilized metal for structural light-weighting, its phases, transformation pathways (transition states), and structures have scientific and industrial importance. Impurities, pressure, and temperature control the…

材料科学 · 物理学 2017-11-28 N. A. Zarkevich , D. D. Johnson
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