相关论文: Spin filtering in a hybrid ferromagnetic-semicondu…

The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…

Spin superfluids enable long-distance spin transport through classical ferromagnets by developing topologically stable magnetic textures. For small spins at low dimensions, however, the topological protection suffers from strong quantum…

Hybrid systems composed of a single nitrogen-vacancy center spin magnetically coupled to a macroscopic mechanical resonator constitute promising platforms for the realization of quantum information protocols and for quantum sensing…

The propagation of an electron beam in the presence of transverse magnetic fields possessing integer topological charges is presented. The spin--magnetic interaction introduces a nonuniform spin precession of the electrons that gains a…

We study the physical properties of a half-metallic ferromagnet$\mid$superconductor (HM$\mid$S) bilayer, allowing for an arbitrary bulk pairing symmetry of the superconductor and spin-dependent processes at the interface. In particular, we…

We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric…

We introduce a new spin filter based on spin-resolved Fano resonances due to spin-split levels in a quantum ring (QR) side-coupled to a quantum wire (QW). Spin-orbit coupling inside the QR, together with external magnetic fields, induces…

We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…

We show that the tunable hybridization between two lateral quantum dots connected to non-magnetic current leads in a `hanging-dot' configuration that can be used to implement a bipolar spin filter. The competition between Zeeman, exchange…

Superconductor$-$ferromagnetic-insulator heterostructures are paradigmatic systems for studying the mutual influence of superconductivity and magnetism via proximity effects. In particular, spin-split superconductivity is realized in such…

Spin-dependent transport through an interacting single-level quantum dot coupled to ferromagnetic leads with non-collinear magnetizations is analyzed theoretically. The transport properties and average spin of the dot are investigated…

We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through…

Graphitic nanostructures, e.g. carbon nanotubes (CNT) and graphene, have been proposed as ideal materials for spin conduction[1-7]; they have long electronic mean free paths[8] and small spin-orbit coupling[9], hence are expected to have…

The electronic and magnetic properties of Fe/GaAs(001) magnetic junctions are investigated using first-principles density-functional calculations. Abrupt and intermixed interfaces are considered, and the dependence of charge transfer,…

New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…

Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar…

Boundary conditions are derived that determine the penetration of spin current through an interface of two non-collinear ferromagnets with an arbitrary angle between their magnetization vectors. We start from the well-known transformation…

We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two…

Inefficient screening of electric fields in nanoconductors makes electric manipulation of electronic transport in nanodevices possible. Accordingly, electrostatic (charge) gating is routinely used to affect and control the Coulomb…

It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…