相关论文: Current induced electron spin polarization in stra…

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…

We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be…

Spin current is a central theme in spintronics, and its generation is a keen issue. The spin-polarized current injection from the ferromagnet, spin battery, and spin Hall effect have been used to generate spin current, but Ohmic currents in…

The idea to utilize not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed. A novel advancement…

Antiferromagnetism couples electron spin to its orbital motion, thus allowing excitation of electron-spin transitions by an ac electric rather than magnetic field - with absorption, exceeding that of common electron spin resonance at least…

Semiconductor nanocrystals are being used as hosts to trap and manipulate single spins. Spins in nanocrystals can have different properties than their bulk counterparts, owing both to quantum confinement and surface effects. We will show…

We analyze electron spin relaxation in electronic transport through coherently coupled double quantum dots in the spin blockade regime. In particular, we focus on hyperfine interaction as the spin relaxation mechanism. We pay special…

We demonstrate all-electrical spin generation and subsequent manipulation by two successive electric field pulses in an n-InGaAs heterostructure in a time-resolved experiment at zero external magnetic field. The first electric field pulse…

Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin…

We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…

The concept of a ponderomotive force due to the intrinsic spin of electrons is developed. An expression containing both the classical as well as the spin-induced ponderomotive force is derived. The results are used to demonstrate that an…

An L-shaped strained n-InGaAs channel is used to polarize and subsequently rotate electron spins solely by means of electric fields. Precession of electrically-excited spins in the absence of applied magnetic fields is directly observed by…

Spin-polarized transport is investigated in normal metal-superconductor (NS) junctions as a function of interface transmissivity as well as temperature when the density of states of a superconductor is Zeeman-split in response to an…

Extensive efforts are currently being devoted to developing a new electronic technology, called spintronics, where the spin of electrons is explored to carry information. [1,2] Several techniques have been developed to generate pure spin…

We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through…

We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the…

Current-induced electron spin polarization is shown to produce nuclear hyperpolarization through dynamic nuclear polarization. Saturated fields of several millitesla are generated upon the application of electric field over a timescale of a…

The effect of a uniaxial strain on the optical spin orientation of a cubic semiconductor is investigated by calculating the valence wavefunctions, the optical oscillator strengths and the initial electron spin polarization for near resonant…

In this paper we review the recent field of organic spintronics, where organic materials are applied as a medium to transport and control spin-polarized signals. The contacts for injecting and detecting spins are formed by metals, oxides,…

We consider theoretically transport in a spinfull one-channel interacting quantum wire placed in an external magnetic field. For the case of two point-like impurities embedded in the wire, under a small voltage bias the spin-polarized…