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Gate-tunable Josephson junctions (JJs) are the backbone of superconducting classical and quantum computation. Typically, these systems exploit low charge concentration materials, and present technological diffculties limiting their…

介观与纳米尺度物理 · 物理学 2019-09-24 Federico Paolucci , Francesco Vischi , Giorgio De Simoni , Claudio Guarcello , Paolo Solinas , Francesco Giazotto

We investigate the ${\rm H_3S}$ phase of sulphur hydride under high pressure $\simeq$ 200 GPa by means of {\it ab-initio} calculations within the framework of the density-functional theory (DFT) with the PBE0 hybrid exchange-correlation…

超导电性 · 物理学 2015-11-30 Matej Komelj , Henry Krakauer

T center defects in silicon provide an attractive platform for quantum technologies due to their unique spin properties and compatibility with mature silicon technologies. We investigate several gate protocols between single T centers,…

We investigate a hybrid quantum system consisting of spatially separated resonant exchange qubits, defined in three-electron semiconductor triple quantum dots, that are coupled via a superconducting transmission line resonator. Drawing on…

介观与纳米尺度物理 · 物理学 2016-11-23 V. Srinivasa , J. M. Taylor , C. Tahan

Resistivity augmentation in nanoscale metal interconnects is a performance limiting factor in integrated circuits. Here we present calculations of electron scattering and transmission at the interface between Cu interconnects and their…

介观与纳米尺度物理 · 物理学 2009-11-30 Baruch Feldman , Scott T. Dunham

Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge…

材料科学 · 物理学 2017-08-01 Xiaoming Wang , Keivan Esfarjani , Mona Zebarjadi

An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5…

其他凝聚态物理 · 物理学 2008-07-07 D. R. McCamey , G. W. Morley , H. A. Seipel , L. C. Brunel , J. van Tol , C. Boehme

Using a first principles linear response approach, we study the magnetic exchange interactions J for a series of superconducting cuprates. We reproduce the observed spin-wave dispersions together with other experimental trends, and show…

强关联电子 · 物理学 2011-01-17 Xiangang Wan , Thomas A. Maier , Sergej Y. Savrasov

A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighbouring spins via the natural exchange…

介观与纳米尺度物理 · 物理学 2016-02-23 G. Pica , B. W. Lovett , R. N. Bhatt , T. Schenkel , S. A. Lyon

The motivation to develop materials for quantum technologies has put exploration of novel quantum states of matter at the focus of several research fields, with particular efforts towards understanding and controlling the behaviour of…

We present an analysis of electron transport through two weakly coupled precision placed phosphorus donors in silicon. In particular, we examine the (1,1) to (0,2) charge transition where we predict a new type of current blockade driven…

量子物理 · 物理学 2015-09-21 Samuel K. Gorman , Matthew A. Broome , William J. Baker , Michelle Y. Simmons

A quantum dot weakly coupled to two normal metal leads exhibits resonant transmission when one of the dot energy levels lies within the applied bias window. But when the quantum dot is sidecoupled to the transport channel, transmission in…

介观与纳米尺度物理 · 物理学 2021-03-02 Abhiram Soori

We present density functional theory calculations of phosphorus dopants in bulk silicon and of several properties relating to their use as spin qubits for quantum computation. Rather than a mixed pseudopotential or a Heitler-London…

介观与纳米尺度物理 · 物理学 2015-06-12 Loren Greenman , Heather D. Whitley , K. Birgitta Whaley

Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a…

量子物理 · 物理学 2007-08-01 K. H. Lee , A. D. Greentree , J. P. Dinale , C. C. Escott , A. S. Dzurak , R. G. Clark

In this work we investigate the supercurrent in a hybrid topological Josephson junction consisting of two planes of topological insulator (TI) in a specific configuration, which allows both local (LAR) and crossed (CAR) Andreev processes at…

介观与纳米尺度物理 · 物理学 2019-03-06 Gianmichele Blasi , Fabio Taddei , Vittorio Giovannetti , Alessandro Braggio

We investigate the design and functionality of a network of loop-shaped charge qubits with switchable nearest-neighbor coupling. The qubit coupling is achieved by placing large Josephson junctions at the intersections of the qubit loops and…

超导电性 · 物理学 2016-08-31 M. Wallquist , J. Lantz , V. S. Shumeiko , G. Wendin

We propose a many-body mechanism for a strong Josephson diode effect (JDE) in an interacting nanoscale SQUID formed by two parallel quantum dots coupled to superconducting leads. Unlike conventional diode behavior, where nonreciprocity…

超导电性 · 物理学 2026-04-02 Zelei Zhang , Jianxiong Zhai , Yi Zhang , Jiawei Yan

We study a superconducting quantum point contact made of a narrow In$_{0.75}% $Ga$_{0.25}$As channel with Nb proximity electrodes. The narrow channel is formed in a gate-fitted constriction of InGaAs/InAlAs/InP heterostructure hosting a…

介观与纳米尺度物理 · 物理学 2014-04-23 Hiroshi Irie , Yuichi Harada , Hiroki Sugiyama , Tatsushi Akazaki

The discovery that a gate electrode suppresses the supercurrent in purely metallic systems is missing a complete physical understanding of the mechanisms at play. We here study the origin of this reduction in a Superconductor-Normal…

An electron-phonon interaction arising from the modulation of the superexchange interaction by phonons is studied within the theoretical framework of Kondo lattices. It is relevant in strongly correlated electron liquids in cuprate oxide…

超导电性 · 物理学 2009-11-10 Fusayoshi J. Ohkawa