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The polarizability of nearby ions may have a significant impact on electron interactions in solids, but only limited experimental data are available to support this picture. In this work, using a highly simplified description of the…

超导电性 · 物理学 2024-08-26 Xiaoxiao Xiong , Fabio Boschini , Mona Berciu

Carbon nanotube (CNT) Josephson junctions in the open quantum dot limit exhibit superconducting switching currents which can be controlled with a gate electrode. Shapiro voltage steps can be observed under radiofrequency current…

介观与纳米尺度物理 · 物理学 2009-11-13 J. -P. Cleuziou , W. Wernsdorfer , S. Andergassen , S. Florens , V. Bouchiat , Th. Ondarcuhu , M. Monthioux

We apply an elementary measurement scheme to calculate the electronic triplet-singlet transition mediated by hyperfine interaction in a double quantum dot. We show how the local character of the hyperfine interaction and the nuclear…

介观与纳米尺度物理 · 物理学 2010-02-22 Fernando Domínguez , Gloria Platero

We present a theoretical analysis of a microwave spectroscopy experiment on a charge qubit defined by a P$_2^+$ donor pair in silicon, for which we calculate Hamiltonian parameters using the effective-mass theory of shallow donors. We solve…

其他凝聚态物理 · 物理学 2009-11-11 C. J. Wellard , L. C. L. Hollenberg , S. Das Sarma

A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for…

材料科学 · 物理学 2015-05-13 S. -Y. Paik , S. -Y. Lee , W. J. Baker , D. R. McCamey. C. Boehme

A high degree of controllability and long coherence time make the nuclear spin of a phosphorus donor in isotopically purified silicon a promising candidate for a quantum bit. However, long-distance two-qubit coupling and fast, robust gates…

量子物理 · 物理学 2020-05-22 James Simon , F. A. Calderon-Vargas , Edwin Barnes , Sophia E. Economou

The manuscript theoretically discusses various important aspects for donor atom based single qubit operations in silicon (Si) quantum computer architecture at room temperature using a single nitrogen (N) deep-donor close to the Si/SiO2…

介观与纳米尺度物理 · 物理学 2024-01-23 Soumya Chakraborty , Arup Samanta

Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…

介观与纳米尺度物理 · 物理学 2016-01-20 Nick R. Papior , Tue Gunst , Daniele Stradi , Mads Brandbyge

We propose a model for resonant Josephson tunneling through quantum dots that accounts for Cooper pair-breaking processes in the superconducting leads caused by a magnetic field or spin-flip scattering. The pair-breaking effect on the…

介观与纳米尺度物理 · 物理学 2007-05-23 Grygoriy Tkachov , Klaus Richter

Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…

介观与纳米尺度物理 · 物理学 2015-09-02 M. Urdampilleta , A. Chatterjee , C. C. Lo , T. Kobayashi , J. Mansir , S. Barraud , A. C. Betz , S. Rogge , M. F. Gonzalez-Zalba , J. J. L. Morton

Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound…

介观与纳米尺度物理 · 物理学 2007-05-23 M. J. Calderon , Belita Koiller , S. Das Sarma

Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long…

材料科学 · 物理学 2020-03-28 Daniel K. Park , Sejun Park , Hyejung Jee , Soonchil Lee

This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which…

The exchange interaction is a foundational building block for the operation of spin-based quantum processors. Extracting the exchange interaction coefficient $J(\mathbf{V})$, as a function of gate electrode voltages, is important for…

介观与纳米尺度物理 · 物理学 2026-05-11 Dylan Albrecht , Sarah Thompson , N. Tobias Jacobson , Ryan Jock

Scattering angle differential cross sections for the He+ + He single electron capture process are studied using plane wave Born approximation models for projectile energies between 30 keV and 1.89 MeV. Within this simplistic framework, we…

原子物理 · 物理学 2019-02-01 A. L. Harris , A. Plumadore

Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…

Quantum coherence is of crucial importance for the applicability of donor based quantum computing. In this Letter we describe the observation of the interference of conduction paths induced by two donors in a nano-MOSFET resulting in a Fano…

介观与纳米尺度物理 · 物理学 2015-05-14 J. Verduijn , G. C. Tettamanzi , G. P. Lansbergen , N. Collaert , S. Biesemans , S. Rogge

Symmetry plays a critical role in determining various properties of a material. Semiconducting p-n junction diode exemplifies the engineered skew electronic response and is at the heart of contemporary electronic circuits. The…

Nanopores made with low dimensional semiconducting materials, such as carbon nanotubes and graphene slit pores, are used in supercapacitors. In theories and simulations of their operation, it is often assumed that such pores screen ion-ion…

材料科学 · 物理学 2017-01-24 Alpha A. Lee , Dominic Vella , Alain Goriely

We theoretically study the Hilbert space structure of two neighbouring P donor electrons in silicon-based quantum computer architectures. To use electron spins as qubits, a crucial condition is the isolation of the electron spins from their…

介观与纳米尺度物理 · 物理学 2009-11-11 L. M. Kettle , Hsi-Sheng Goan , Sean C. Smith