相关论文: Ferromagnetic tunneling junctions at low voltages:…

We show that elastic currents that take into account variations of the tunnel transmitivity with voltage and a large ratio of majority to minority spin densities of states of the $s$ band, can account for the low voltage current anomalies…

We have studied tunnel magnetoresistance (TMR) in junctions with 3d ferromagnetic electrodes. Previously we predicted that defects in the barrier would result in reduced effective polarization P of the impurity assisted current. This is…

The current-voltage ($IV$) characteristics beyond the linear response regime of magnetic tunnel junction (MTJ) is systematically investigated. We find a clear negative correlation between the two coefficients to characterize the linear…

We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and…

The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…

Tunneling Magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal…

Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…

We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…

The conductance fluctuations of a metallic wire which is interrupted by a small tunnel junction has been explored experimentally. In this system, the bias voltage V, which drops almost completely inside the tunnel barrier, is used to probe…

The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the non-equilibrium Green's functions method with density functional…

We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current…

The influence of ballistic channels superimposed on tunneling conduction channels in magnetic tunnel junctions has been studied in a manganese oxide based tunneling device. Inversion of magnetoresistance has been observed in magnetic tunnel…

We study the magnetization dynamics in a ferromagnet-insulator-superconductor tunnel junction and the associated buildup of the electrical polarization. We show that for an open circuit, the induced voltage varies strongly and…

The dependence of tunneling magnetoresistance and spin-transfer torque in FeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage are investigated ab initio. We find that the tunneling magnetoresistance decreases with…

Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…

We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct…

A tunnel magnetic junction is considered with magnetic hard and magnetic soft layers of cubic symmetry. The magnetic switching is analyzed of the layers by a magnetic field perpendicular to the initial magnetizations. In such a situation,…

Tunneling spectroscopy is applied to tunnel junctions with only one or no ferromagnetic electrode to study the excitation of quasi particles in magnetic tunnel junctions. The bias dependence is investigated with high accuracy by inelastic…

Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…