相关论文: Renormalization of resonant tunneling in MOSFETs
We show that random telegraph signals in metal-oxide-silicon transistors at millikelvin temperatures provide a powerful means of investigating tunneling between a two-dimensional electron gas and a single defect state. The tunneling rate…
Two-dimensional electron gas coupled to adjacent impurity sites in high-frequency out-of-plane ac control electric field is investigated. Modification of tunneling rates as a function of the field amplitude is calculated. Nonlinear…
The local density of states of a degenerate semiconductor is investigated at low magnetic fields. In order to realize this experiment, we designed a strongly asymmetric double-barrier heterostructure with heavily doped contacts and study…
It is shown that in a structure consisting of a superconducting ring-shaped electrode overlapped by a normal metal contact through a thin oxide barrier, measurements of the tunnel current in magnetic field can probe persistent currents in…
Inspired by recent experimental findings that will be presented elsewhere, we formulate and investigate a model of a superconducting junction that combines the electron propagation in a quantum channel with an arbitrary transmission, and…
Interplay between changes of energy levels and tunneling amplitudes caused by localized electrons on-site Coulomb interaction depending on non-equilibrium electron filling numbers is analyzed. Specific features of local tunneling…
We show that an instability may be present in resonant tunneling through a quantum well in one, two and three dimensions, when the resonance lies near the emitter Fermi level. A simple semiclassical model which simulates the resonance and…
A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases…
We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are…
Due to the Fermi-Dirac statistics of electrons the temporal correlations of tunneling events in a double barrier setup are typically negative. Here, we investigate the shot noise behavior of a system of two capacitively coupled quantum dot…
The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the non-equilibrium Green's functions method with density functional…
We study the effect of electron-electron interactions on the resonant-tunneling spectroscopy of the localized states in a barrier. Using a simple model of three localized states, we show that, due to the Coulomb interactions, a single state…
We investigate the tunneling of quasiparticles through a rectangular potential barrier of finite height and width, in 2d and 3d semimetals with band structures consisting of a quadratic band crossing point. We compute the transmission…
Time-resolved resonance fluorescence (RF) is used to analyse electron tunneling between a single self-assembled quantum dot (QD) and an electron reservoir. In equilibrium, the RF intensity reflects the average electron occupation of the QD…
We report on the resonant tunneling effect and the increase of tunneling magnetoresistance (TMR) induced by it in ferromagnetic-semiconductor GaMnAs quantum-well heterostructures. The observed quantum levels of the GaMnAs quantum well were…
We study the behavior of shot noise in resonant tunneling junctions far from equilibrium. Quantum-coherent elastic charge transport can be characterized by a transmission function, that is the probability for an incoming electron at a given…
We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar…
We consider the effect of electron correlations on tunneling from a 2D electron layer in a magnetic field parallel to the layer. A tunneling electron can exchange its momentum with other electrons, which leads to an exponential increase of…
We evaluate tunneling rates into/from a voltage biased quantum wire containing weak backscattering defect. Interacting electrons in such a wire form a true nonequilibrium state of the Luttinger liquid (LL). This state is created due to…
We report on a study of interaction effects in the tunneling density-of-states of a disordered two-dimensional electron gas in the strong magnetic field limit where only the lowest Landau level is occupied. Interactions in the presence of…