Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals
Condensed Matter
2009-10-28 v1
Abstract
We show that random telegraph signals in metal-oxide-silicon transistors at millikelvin temperatures provide a powerful means of investigating tunneling between a two-dimensional electron gas and a single defect state. The tunneling rate shows a peak when the defect level lines up with the Fermi energy, in excellent agreement with theory of the Fermi-edge singularity at finite temperature. This theory also indicates that defect levels are the origin of the dissipative two-state systems observed previously in similar devices.
Cite
@article{arxiv.cond-mat/9605020,
title = {Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals},
author = {D. H. Cobden and B. A. Muzykantskii},
journal= {arXiv preprint arXiv:cond-mat/9605020},
year = {2009}
}
Comments
5 pages, REVTEX, 3 postscript figures included with epsfig