相关论文: Remote-doping scattering and the local field corre…
We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in…
We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor \nu=5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping…
Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize…
We argue that interesting strongly correlated two-dimensional electron systems can be created by modulation doping near a heterojunction between Mott insulators. Because the dopant atoms are remote from the carrier system, the electronic…
We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron…
Undoped Si-SiGe two-dimensional electron gas (2DEG) provide an ideal platform for hosting quantum-dot spin-qubits owing enhanced spin dephasing times and compatibility with standard CMOS technology. The strained Si quantum well reduces the…
A variational Monte Carlo calculation is used for studying the ground state of the two-dimensional Hubbard model, including hopping between both nearest and next-nearest neighbor sites. Superconductivity with d-wave symmetry is found to be…
While both the hole and electron doped cuprates can exhibit $d_{x^2-y^2}$-wave superconductivity, the local distribution of the doped carriers is known to be significantly different with the doped holes going primarily on the O sites while…
Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the…
The transition-metal dichalcogenides have attracted a lot of attention as a possible stepping-stone toward atomically thin and flexible field-effect transistors. One key parameter to describe the charge transport is the time between two…
Two-dimensional (2D) quartic dispersion materials are known to develop magnetization upon doping. Here we conduct a systematic investigation of magnetization in hole-doped quartic dispersion materials (GaS, InSe, TiO$_{2}$), focusing on the…
The dependences of the transport scattering time {\tau}t, quantum lifetime {\tau}q, and their ratio {\tau}t/{\tau}q on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period…
The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in…
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of…
We study the effects of hole doping on the two-dimensional Heisenberg-Kondo model around the quantum critical point, where the spin liquid phase (Kondo insulator) and the magnetically ordered phase are separated via a second-order phase…
Effects of the backward scattering with large momentum transfer are examined in two-dimensional electron system with a special emphasis on electrons around ($\pi$,0), (0,$\pi$). The phase diagram is shown in the plane of temperature $T$ and…
We use neutron scattering to study magnetic order and spin excitations in BaFe$_{1.96}$Ni$_{0.04}$As$_{2}$. On cooling, the system first changes the lattice symmetry from tetragonal to orthoromhbic near $\sim$97 K, and then orders…
We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering…
Localization of the helical edge states in quantum spin Hall insulators requires breaking time reversal invariance. In experiments this is naturally implemented by applying a weak magnetic field B. We propse a model based on scattering…
Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $\tau_{CR}$ shows a negative in-plane…