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相关论文: Conductance distribution in nanometer-sized semico…

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We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical…

材料科学 · 物理学 2009-11-13 François Léonard , A. Alec Talin , B. S. Swartzentruber , S. T. Picraux

We examine an effect of acoustic phonon scattering on an electric conductivity of single-component molecular conductor [Pd(dddt)$_2$] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate) with a half-filled band by applying the previous…

材料科学 · 物理学 2020-09-30 Yoshikazu Suzumura , Reizo Kato , Masao Ogata

Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the…

介观与纳米尺度物理 · 物理学 2009-12-07 M. Gasseller , R. Loo , J. F. Harrison , M. Caymax , S. Rogge , S. H. Tessmer

The role of doping in tailoring thermal transport in semiconductors is critical for efficient thermal management in electronic devices. While the effects of doping have been extensively studied to tune electrical properties, its impact on…

Theoretical treatments of tunneling in electronic devices are often based on one-dimensional (1D) approximations. Here we show that for many nanoscale devices, such as widely studied semiconductor gate-defined quantum dots, 1D…

介观与纳米尺度物理 · 物理学 2014-01-07 Mark Friesen , M. Y. Simmons , M. A. Eriksson

Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of…

介观与纳米尺度物理 · 物理学 2009-12-23 Marc Scheffler , Stevan Nadj-Perge , Leo P. Kouwenhoven , Magnus T. Borgström , Erik P. A. M. Bakkers

The following article presents a multi-length-scale characterization approach for investigating doping chemistry and spatial distributions within semiconductors, as demonstrated using a state-of-the-art CMOS image sensor. With an intricate…

To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not…

A quantum dot is a sub-micron-scale conducting device containing up to several thousand electrons. Transport through a quantum dot at low temperatures is a quantum-coherent process. This review focuses on dots in which the electron's…

介观与纳米尺度物理 · 物理学 2008-11-26 Y. Alhassid

We measure tunneling through a single quantum level in a carbon nanotube quantum dot connected to resistive metal leads. For the electrons tunneling to/from the nanotube, the leads serve as a dissipative environment, which suppresses the…

介观与纳米尺度物理 · 物理学 2010-10-08 Yu. Bomze , H. Mebrahtu , I. Borzenets , A. Makarovski , G. Finkelstein

Nanostructuring on length scales corresponding to phonon mean free paths provides control over heat flow in semiconductors and makes it possible to engineer their thermal properties. However, the influence of boundaries limits the validity…

The behavior of spin diffusion in doped semiconductors is shown to be qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet in an intrinsic semiconductor must be a multiple-band disturbance, involving inhomogeneous…

材料科学 · 物理学 2009-10-31 Michael E. Flatte , Jeff M. Byers

We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2-islands grown on Si(111) with an STM-tip. The conductance per unit area was found to increase with decreasing diode…

凝聚态物理 · 物理学 2009-11-07 G. D. J. Smit , S. Rogge , T. M. Klapwijk

Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control…

材料科学 · 物理学 2021-05-25 David Mocatta , Guy Cohen , Jonathan Schattner , Oded Millo , Eran Rabani , Uri Banin

The role of image charges in nanoporous semiconductor materials is investigated within the framework of the effective mass and envelope function approximations. We show that nanometric air bubbles in these materials can act as…

介观与纳米尺度物理 · 物理学 2009-11-11 J. Planelles , J. L. Movilla

Semiconductor thermistors operating in the variable range hopping conduction regime have been used in thermal detectors of all kinds for more than fifty years. Their use in sensitive bolometers for infrared astronomy was a highly developed…

仪器与探测器 · 物理学 2015-06-26 Dan McCammon

Doping mobile carriers into ordinary semiconductors such as Si, GaAs, and ZnO was the enabling step in the electronic and optoelectronic revolutions. The recent emergence of a class of "Quantum Materials", where uniquely quantum…

材料科学 · 物理学 2020-11-30 Alex Zunger , Oleksandr I. Malyi

A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical doping controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent…

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily…

We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in…

介观与纳米尺度物理 · 物理学 2015-05-08 S. Das Sarma , E. H. Hwang , S. Kodiyalam , L. N. Pfeiffer , K. W. West