相关论文: Spin extraction from a non-magnetic semiconductor
We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure.…
Current understanding of spin injection tells us that a metal ferromagnet can inject spin into a semiconductor with 100% efficiency if either the ferromagnet is an ideal half metal with 100% spin polarization, or there exists a suitable…
The occurrence of a finite mismatch between the up and down spin energy channels due to the application of an electric field, leading to the generation of a polarized spin current from an unpolarized beam in antiferromagnetic materials, has…
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…
We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable…
We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
Selective and large polarization of current injected into semiconductor (SC) is predicted in Ferromagnet (FM)/Quantum Dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is…
Ferromagnets with high spin polarization are known to be valuable for spintronics--a research field that exploits the spin degree of freedom in information technologies. Recently, antiferromagnets have emerged as promising alternative…
The electron spin is emerging as a new powerful tool in the electronics and optics industries. Many proposed applications involve the creation of spin currents, which so far have proven to be difficult to produce in semiconductor…
We study the spin polarization of tunneling holes injected from ferromagnetic GaMnAs into a p-doped semiconductor through a tunneling barrier. We obtain an upper limit to the spin injection rate. We find that spin-orbit interaction…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…
It is shown that the Kerr rotation of spin-polarized electrons is modulated by the distance of the electrons from the sample surface. Time-resolved Kerr rotation of optically-excited spin-polarized electrons in the depletion layer of…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
As is well known the absorption of circularly polarized light in semiconductors results in optical orientation of electron spins and helicity-dependent electric photocurrent, and the absorption of linearly polarized light is accompanied by…
We present tight-binding calculations of the spin torque in non-collinear magnetic tunnel junctions based on the non-equilibrium Green functions approach. We have calculated the spin torque via the effective local magnetic moment approach…
The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…
It is well-known that the Curie temperature, and hence the magnetization, in diluted magnetic semiconductor (DMS) like Ga$_{1-x}$Mn$_x$As can be controlled by changing the equilibrium density of holes in the material. Here, we propose that…
A theory of spin polarized tunneling spectroscopy based on a scattering theory is given for tunneling junctions between ferromagnets and d-wave superconductors. The spin filtering effect of an exchange field in the insulator is also…
Spin transport properties at finite electric and magnetic fields are studied by using the generalized semiclassical Boltzmann equation. It is found that the spin diffusion equation for non-equilibrium spin density and spin currents involves…