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The effects of annealing and variation of temperature on the electrical and thermoelectric properties of e-beam evaporated InSe thin films has been investigated in details. The XRD study demonstrates that the as-deposited InSe thin films…

材料科学 · 物理学 2019-11-28 Jaker Hossain , Md. Julkarnain , B. K. Mondal , M. A. Newaz , K. A. Khan

Strained coherent heteroepitaxy of III-V semiconductor films such as In$_x$Ga$_{1-x}$As/GaAs has potential for electronic and optoelectronic applications such as high density logic, quantum computing architectures, laser diodes, and other…

材料科学 · 物理学 2009-11-13 Lawrence H. Friedman

We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature.…

材料科学 · 物理学 2015-06-23 J. Barzola-Quiquia , T. Lehmann , M. Stiller , D. Spemann , P. Esquinazi , P. Häussler

Phase transitions in metastable $\alpha$-, $\kappa(\epsilon)$-, and $\gamma$-Ga$_2$O$_3$ films to thermodynamically stable $\beta$-Ga$_2$O$_3$ during annealing in air, N$_2$, and vacuum have been systematically investigated via in-situ…

材料科学 · 物理学 2024-05-02 J. Tang , K. Jiang , P. Tseng , R. C. Kurchin , L. M. Porter , R. F. Davis

PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to…

Indium selenide is a phase-change chalcogenide whose polymorphism enables a variety of physical properties to be tuned. Here we directly quantify the evolution of the surface work function across the amorphous-to-crystalline transition in…

材料科学 · 物理学 2025-10-13 Marius O. Eji , Md. Sakauat Hasan Sakib , Joseph P. Corbett

Wide-bandgap perovskite stannates are of interest for the emergent all-oxide transparent electronic devices due to their unparalleled room temperature electron mobility. Considering the advantage of amorphous material in integrating with…

材料科学 · 物理学 2021-01-26 Jing Wang , Bingcheng Luo

In$_2$Se$_3$ is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued…

Crystalline symmetries have played a central role in the identification of topological materials. The use of symmetry indicators and band representations have enabled a classification scheme for crystalline topological materials, leading to…

Topological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films…

Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibit fascinating quantum properties such as quantum anomalous Hall effect and axion insulator state. In this work, we systematically investigate the evolution of the…

Using conductive atomic force microscopy, we observed non-uniform distributions of metallic and insulating domains on the surface of a single crystalline (La0.4Pr0.6)0.67Ca0.33MnO3 film grown on a (110) NdGaO3 substrate. The electronic…

材料科学 · 物理学 2014-11-18 Surendra Singh , M. R. Fitzsimmons , H. Jeen , A. Biswas , M. E. Hawley

The top-down synthesis of inherently ferroelectric semiconductors and their integration with traditional material platforms have the potential to enable new low power logic devices, and to harness the bulk photoelectric effect for more…

Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spinel (gamma) film on the top of the monoclinic (beta)…

The primary mechanism of optical memristive devices relies on the phase transitions between amorphous-crystalline states. The slow or energy hungry amorphous-crystalline transitions in optical phase-change materials are detrimental to the…

Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…

强关联电子 · 物理学 2016-09-21 Tobias Peterseim , Martin Dressel , Marc Dietrich , Angelika Polity

Bi2Se3 and Bi2Te3 are layered compounds of technological importance, being excellent thermoelectric materials as well as topological insulators. We report density functional theory calculations of the atomic, electronic and thermoelectric…

材料科学 · 物理学 2013-08-08 Xin Luo , Michael B. Sullivan , Su Ying Quek

Identification and control of topological phases in topological thin films offer great opportunity for fundamental research and the fabrication of topology-based devices. Here, combining molecular beam epitaxy, angle-resolved photoemission…

Structural and mechanical properties of amorphous and nanocomposite carbon are investigated using tight-binding molecular dynamics and Monte Carlo simulations. In the case of amorphous carbon, we show that the variation of sp^3 fraction as…

材料科学 · 物理学 2015-06-25 Maria G. Fyta , Christos Mathioudakis , Georgios Kopidakis , Pantelis C. Kelires

We report the optical, electrical, and structural properties of Si doped $\beta$-Ga$_2$O$_3$ films grown on (010)-oriented $\beta$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of…

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