相关论文: Rashba-effect-induced spin dephasing in n-typed In…
We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of…
Temperature and carrier density dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetry has been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much…
We investigate theoretically the efficiency of the Rashba effect, i.e. the spin splitting resulting from an electric field. This is the mechanism behind the Datta-Das spin transistor. In the research efforts so far the carriers have usually…
We investigate heavy-hole spin relaxation and decoherence in quantum dots in perpendicular magnetic fields. We show that at low temperatures the spin decoherence time is two times longer than the spin relaxation time. We find that the spin…
In semiconductor heterostructures, bulk and structural inversion asymmetry and spin-orbit coupling induce a k-dependent spin splitting of valence and conduction subbands, which can be viewed as being caused by momentum-dependent crystal…
Electron Paramagnetic Resonance experiments show that the decay of Rabi oscillations of ensembles of spin qubits depends noticeably on the microwave power and more precisely on the Rabi frequency, an effect recently called "driven…
Magneto-transport properties of a two-dimensional electron gas in a chain of planar quantum rings are investigated under the Rashba spin-orbit interaction and a transverse homogeneous magnetic field. A modulation potential function models…
Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic…
We investigate theoretically the Rashba spin-orbit interaction in InAs/GaSb quantum wells(QWs). We find that the Rashba spin-splitting (RSS) depends sensitively on the thickness of the InAs layer. The RSS exhibits nonlinear behavior for…
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at…
In semiconductors with inversion asymmetry, spin-orbit coupling gives rise to the well-known Dresselhaus and Rashba effects. If one considers quantum wells with two or more conduction subbands, an additional, intersubband-induced spin-orbit…
Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the quantum well plane. Spin and phase relaxation times are…
An asymmetric triangular potential well provides the simplest model for the confinement of mobile electrons at the interface between two insulating oxides, such as LaAlO_3 and SrTiO_3 (LAO/STO). These electrons have been recently shown to…
A Kramers pair of helical edge states in quantum spin Hall effect (QSHE) is robust against normal dephasing but not robust to spin dephasing. In our work, we provide an effective spin dephasing mechanism in the puddles of two-dimensional…
We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr…
The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark…
We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the…
We investigate the influence on the density of states and the density of spin polarization for a two-dimensional hole gas with Rashba spin-orbit coupling under intense terahertz laser fields. Via Floquet theorem, we solve the time-dependent…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
The interplay of Rashba and quantum spin Hall effects in non-centrosymmetric systems presents both challenges and opportunities for spintronic applications. While Rashba spin-orbit coupling can disrupt the quantum spin Hall phase, their…