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相关论文: Charge Density Distributions in Doped Antiferromag…

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One of the most puzzling facts about cuprate high-temperature superconductors in the lightly doped regime is the coexistence of uniform superconductivity and/or antiferromagnetism with many low-energy charge-ordered states in a…

强关联电子 · 物理学 2019-02-13 Wei-Lin Tu , Ting-Kuo Lee

The free energy bounds for inhomogeneous current states in doped antiferromagnetic insulators and spatial configurations of spin and charge degrees of freedom in lightly and heavily underdoped phases of this strongly correlated electron…

强关联电子 · 物理学 2007-05-23 Dmitry I. Iudin , Alexander P. Protogenov

The electronic structural properties in the presence of constrained magnetization and a charged background are studied for a monolayer of FeSe in non-magnetic, checkerboard-, and striped-antiferromagnetic (AFM) spin configurations. First…

超导电性 · 物理学 2013-02-12 Timur Bazhirov , Marvin L. Cohen

We study the properties of the striped phases that have been proposed for the doped cuprate planar quantum antiferromagnets. We invoke an effective, spatially anisotropic, non-linear sigma model in two space dimensions. Our theoretical…

凝聚态物理 · 物理学 2009-10-28 A. H. Castro Neto , Daniel Hone

Recent experiments in the underdoped regime of the hole-doped cuprates have found evidence for an incommensurate charge density wave state. We present an analysis of the charge ordering instabilities in a metal with antiferromagnetic…

强关联电子 · 物理学 2014-12-23 Debanjan Chowdhury , Subir Sachdev

We have studied in details the electronic structure and magnetism in M (Mn and Cr) doped semiconducting half-Heusler compounds FeVSb, CoTiSb and NiTiSn (XM$_{x}$Y$_{1-x}$Z) in a wide concentration range using local-spin density functional…

材料科学 · 物理学 2007-05-23 B. R. K. Nanda , I. Dasgupta

Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With…

强关联电子 · 物理学 2009-11-07 T. K. Lee , Chang-Ming Ho , Naoto Nagaosa , Wei-Cheng Lee

Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…

强关联电子 · 物理学 2009-11-10 Tudor D. Stanescu , Philip Phillips

A density functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density functional theory are the charge and spin densities of the…

凝聚态物理 · 物理学 2009-11-07 J. Fernandez-Rossier , L. J. Sham

We report results of a Monte Carlo study of doped, diluted magnetic semiconductors in the low carrier density (insulating) regime. We find that the system undergoes a transition from a paramagnet at high temperatures to a ferromagnet at low…

材料科学 · 物理学 2007-05-23 Xin Wan , R. N. Bhatt

Topological nodal-line semimetals are characterized by symmetry-protected one-dimensional band-touching lines or loops, which give rise to their peculiar Fermi surfaces at low energies. Furthermore, if time-reversal or inversion symmetry…

介观与纳米尺度物理 · 物理学 2024-01-17 Hamid Rahimpoor , Saeed H. Abedinpour

The ground-state density of states of the half-filled Falicov-Kimball model contains a charge-density-wave gap. At finite temperature, this gap is not immediately closed, but is rather filled in by subgap states. For a specific combination…

强关联电子 · 物理学 2019-08-21 Martin Žonda , Junichi Okamoto , Michael Thoss

The calculations of the charge distribution in C$_{60}$-based FET structure are presented. A simple model is proposed to describe the distribution of the injected electrons or holes between two-dimensional layers. The calculations show that…

超导电性 · 物理学 2007-05-23 V. A. Kuprievich , O. L. Kapitanchuk , O. V. Shramko

We present ab initio density-functional calculations for acceptors, donors, and native defects in aluminum nitride, showing that acceptors are deeper (Be ~ 0.25 eV, Mg_ 0.45 eV) and less soluble than in GaN; at further variance with GaN,…

材料科学 · 物理学 2009-10-31 Antonella Fara , Fabio Bernardini , Vincenzo Fiorentini

A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate…

超导电性 · 物理学 2017-02-21 Peng Cai , Wei Ruan , Yingying Peng , Cun Ye , Xintong Li , Zhenqi Hao , Xingjiang Zhou , Dung-Hai Lee , Yayu Wang

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

强关联电子 · 物理学 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg

While ferromagnetism at relatively high temperatures is seen in diluted magnetic semiconductors such as Ga_(1-x)Mn_(x)As, doped semiconductors without magnetic ions have not shown evidence for ferromagnetism. Using a generalized disordered…

强关联电子 · 物理学 2009-11-13 Erik Nielsen , R. N. Bhatt

The superconducting properties of a recently proposed phenomenological model for a weakly doped antiferromagnet are analyzed, taking into account fluctuations of the phase of the order parameter. In this model, we assume that the doped…

超导电性 · 物理学 2009-11-11 V. M. Loktev , V. M. Turkowski

We study a recently proposed quantum dimer model for the pseudogap metal state of the cuprates. The model contains bosonic dimers, representing a spin-singlet valence bond between a pair of electrons, and fermionic dimers, representing a…

强关联电子 · 物理学 2016-09-09 Junhyun Lee , Subir Sachdev , Steven R. White

We have observed the metal-insulator transition in the strongly correlated insulator FeSi with the chemical substitution of Al at the Si site. The magnetic susceptibility, heat capacity, and field dependent conductivity are measured for Al…

强关联电子 · 物理学 2008-02-03 J. F. DiTusa , K. Friemelt , E. Bucher , G. Aeppli , A. P. Ramirez
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