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相关论文: Anomalous Hall Effect of Reentrant Spin Glass Syst…

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Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn…

CrSb is an attractive material for room-temperature antiferromagnetic spintronic applications because of its high N\'{e}el temperature $\sim$700 K and semi-metallic character. We study the magnetic properties of CrSb bilayers on few-layer…

介观与纳米尺度物理 · 物理学 2021-07-07 Chao Lei , Hua Chen , Allan H. MacDonald

Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic…

The recent realization of epitaxial SrCoO$_3$ thin films has triggered a renewed interest in their electronic, magnetic, and ionic properties. Here we uncover several unusual magneto-transport properties of this compound, suggesting that it…

介观与纳米尺度物理 · 物理学 2018-07-31 Ding Zhang , Hiroaki Ishizuka , Nianpeng Lu , Yujia Wang , Naoto Nagaosa , Pu Yu , Qi-Kun Xue

To investigate the Hall resistivity rH of systems with non-trivial spin structures, transport and magnetic properties of the oxygen deficient perovskite system TbBaCo2O5.53 with non-trivial magnetic structures have been adopted. As has been…

强关联电子 · 物理学 2009-11-11 Toshiaki Fujita , Minoru Soda , Masatoshi Sato

Magnetic, electric and structural properties of La$_{0.96-y}$Nd$_y$K$_{0.04}$MnO$_{3+\delta}$ with 0$\leq y \leq$0.4 have been studied experimentally. A disordered magnetic state is formed as La is substituted by Nd, reflecting the…

材料科学 · 物理学 2009-10-31 R. Mathieu , P. Svedlindh , P. Nordblad

We measure the anomalous Hall effect (AHE) resistivity $\rho_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $\rho_{xx}^2$ in agreement with side jumps and Berry…

强关联电子 · 物理学 2011-12-01 Noam Haham , Yishai Shperber , Moty Schultz , Netanel Naftalis , James W. Reiner , Lior Klein

We carried out a comprehensive study of electronic transport, thermal and thermodynamic properties in FeCr$_2$Te$_4$ single crystals. It exhibits bad-metallic behavior and anomalous Hall effect (AHE) below a weak-itinerant…

强关联电子 · 物理学 2021-01-18 Yu Liu , Hengxin Tan , Zhixiang Hu , Binghai Yan , C. Petrovic

The applicability and usefulness of Rashba model have been extended by recent observations in the field of spintronics, such as the spin-orbit torque at the junction interfaces between ferromagnetic (FM) metals and non-magnetic (NM) metals…

材料科学 · 物理学 2018-03-14 Akimasa Sakuma

The spin Hall effect and its inverse play key roles in spintronic devices since they allow conversion of charge currents to and from spin currents. The conversion efficiency strongly depends on material details, such as the electronic band…

介观与纳米尺度物理 · 物理学 2012-09-14 D. H. Wei , Y. Niimi , B. Gu , T. Ziman , S. Maekawa , Y. Otani

The origin of the Hall effect in many itinerant ferromagnets is still not resolved, with an anomalous contribution from the sample magnetization that can exhibit extrinsic or intrinsic behavior. We report the first mid-infared (MIR)…

强关联电子 · 物理学 2015-05-14 M. -H. Kim , G. Acbas , M. -H. Yang , M. Eginligil , P. Khalifah , I. Ohkubo , H. Christen , D. Mandrus , Z. Fang , J. Cerne

The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been…

We report temperature (T) dependence (2-330 K) of DC and AC magnetization (M), isothermal remnant magnetization (M_IRM), heat capacity (C), electrical resistivity (rho), and magnetoresistance (MR) of a ternary intermetallic compound,…

强关联电子 · 物理学 2019-07-08 Ram Kumar , Jyoti Sharma , Kartik K Iyer , E. V. Sampathkumaran

The origin of anomalous Hall effect (AHE) in ferromagnetic metallic glasses (MGs) is not yet understood completely. Here, the AHE is explored in Fe78Si9B13 MGs. We find the behavior of resistivity at low temperature seems to be more likely…

材料科学 · 物理学 2021-08-18 Weiwei Wu , Jinfeng Li , Zhiyu Liao , Hongyu Jiang , Laiquan Shen , Lin Gu , Xianggang Qiu , Yugui Yao , Haiyang Bai

We investigate the temperature dependence of the intrinsic anomalous Hall conductivity in Fe$_3$Ge, which is a ferromagnetic topological metal. We observe a significant anisotropy in the anomalous Hall conductivity between in-plane and…

材料科学 · 物理学 2025-07-18 Susanta Ghosh , Tushar Kanti Bhowmik , Achintya Low , Setti Thirupathaiah

We study the mechanisms of the spin Hall effect (SHE) and anomalous Hall effect (AHE) in 3$d$ ferromagnetic metals (Fe, Co, permalloy (Ni$_{81}$Fe$_{19}$; Py), and Ni) by varying their resistivities and temperature. At low temperatures…

介观与纳米尺度物理 · 物理学 2019-01-08 Yasutomo Omori , Edurne Sagasta , Yasuhiro Niimi , Martin Gradhand , Luis E. Hueso , Felix Casanova , YoshiChika Otani

Various physical properties of the pyrochlore oxide Y2-xBixIr2O7 have been studied. The magnetizations M measured under the conditions of the zero-field-cooling(ZFC) and the field-cooling(FC) have different values below the temperature…

强关联电子 · 物理学 2009-11-10 Natsuki Aito , Minoru Soda , Yoshiaki Kobayashi , Masatoshi Sato

We report the observation of anomalous Hall effect in Mn$_3$Sn polycrystalline thin films deposited on Pt coated Al$_2$O$_3$ substrate with a large anomalous Hall conductivity of 65($\Omega$cm)$^{-1}$ at 3K. The Hall and magnetic…

介观与纳米尺度物理 · 物理学 2023-07-26 W. AfzaL , Z. Yue , Z. Li , M. Fuhrer , X. Wang

The Hall effect on selected samples of the dilution series Nb1-yFe2+y is studied. Normal and anomalous contributions are observed, with positive normal Hall effect dominating at high temperatures. Consistent analysis of the anomalous…

The Hall resistivity rho_{xy} of a La_{2/3}(Ca,Pb)_{1/3}MnO_3 single crystal has been measured as a function of temperature and field. The overall behavior is similar to that observed previously in thin-films. At 5 K, rho_{xy} is positive…

强关联电子 · 物理学 2009-10-31 S. H. Chun , M. B. Salamon , P. D. Han