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相关论文: High-performance planar light-emitting diode

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In this Letter we report on the experimental generation of high energy (10 GeV), ultra-short (fs-duration), ultra-high current (0.1 MA), petawatt peak power electron beams in a particle accelerator. These extreme beams enable the…

Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…

The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse…

We design and fabricate large-area (1.1 mm $\times$ 1.1 mm) photonic crystal quantum cascade lasers, enabling single-mode (wavelength $\sim$ 8.5 $\mu$m) surface emission at room temperature, with a maximum peak power up to 176 mW. The beam…

The advent of the digital age has driven the development of coherent optical modems--devices that modulate the amplitude and phase of light in multiple polarization states. These modems transmit data through fiber optic cables that are…

计算机视觉与模式识别 · 计算机科学 2024-12-02 Parsa Mirdehghan , Brandon Buscaino , Maxx Wu , Doug Charlton , Mohammad E. Mousa-Pasandi , Kiriakos N. Kutulakos , David B. Lindell

We report the design and performance of a time-resolved electron diffraction apparatus capable of producing intense bunches with simultaneously single digit micron probe size, long coherence length, and $200$ fs rms time resolution. We…

Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam…

As a future charge management light source, UV light-emitting diodes (UV LEDs) offer far superior performance in a range of metrics compared to the mercury lamps used in the past. As part of a qualification program a number of short…

仪器与探测器 · 物理学 2017-10-04 D Hollington , J T Baird , T J Sumner , P J Wass

We experimentally investigate and analyze the electrical and optical characteristics of GaAs-based conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction. It was found that TJ LD show a…

应用物理 · 物理学 2018-02-05 Yajie Li , Pengfei Wang , Fangyuan Meng , Hongyan Yu , Xuliang Zhou , Huolei Wang , Jiaoqing Pan

Nonlinear frequency conversion unlocks technologies ranging from telecommunications to quantum computation; however, weak nonlinearities and architectures that resist miniaturization currently limit devices. Here, we combine a…

Microwave sensors integrated with microfluidic platforms can provide the size and permittivity of single cells and microparticles. Amongst the microwave sensor topologies, the planar arrangement of electrodes is a popular choice owing to…

Ultrafast electron diffraction (UED) instruments typically operate at kHz or lower repetition rates and rely on indirect detection of electrons. However, these experiments encounter limitations because they are required to use electron…

化学物理 · 物理学 2024-08-06 Fernando Rodriguez Diaz , Mark Mero , Kasra Amini

The 30 and 44 GHz Back End Modules (BEM) for the Planck Low Frequency Instrument are broadband receivers (20% relative bandwidth) working at room temperature. The signals coming from the Front End Module are amplified, band pass filtered…

Recent advances in LED technology have allowed the development of high-brightness deep-UV LEDs with potential applications in water purification, gas sensing and as excitation sources in fluorescence microscopy. The emission pattern of an…

仪器与探测器 · 物理学 2020-06-24 Mollie McFarlane , Gail McConnell

By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt-anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs hetero-interfaces without atomic…

介观与纳米尺度物理 · 物理学 2009-11-07 Masahiro Yoshita , Hidefumi Akiyama , Loren N. Pfeiffer , Ken W. West

The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11}…

介观与纳米尺度物理 · 物理学 2009-11-10 M. Yamaguchi , S. Nomura , D. Sato , T. Akazaki , H. Tamura , H. Takayanagi

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual non-radiative PDs…

Optical waveguides made from periodically poled materials provide high confinement of light and enable the generation of new wavelengths via quasi-phase-matching, making them a key platform for nonlinear optics and photonics. However, such…

The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We…

The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions…