中文
相关论文

相关论文: Anomalous Hall Effect in SnMnEuTe and SnMnErTe mix…

200 篇论文

The anomalous Hall effect (AHE) of ferromagnetic thin films of Sr$_{1-x}$Ca$_{x}$RuO$_3$ (0 $\leq x \leq$ 0.4) is studied as a function of $x$ and temperature $T$. As $x$ increases, both the transition temperature $T_c$ and the…

材料科学 · 物理学 2009-11-10 R. Mathieu , A. Asamitsu , H. Yamada , K. S. Takahashi , M. Kawasaki , Z. Fang , N. Nagaosa , Y. Tokura

Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we…

材料科学 · 物理学 2013-02-15 L. Kilanski , R. Szymczak , W. Dobrowolski , A. Podgórni , A. Avdonin , V. E. Slynko , E. I. Slynko

The origin of the Hall effect in many itinerant ferromagnets is still not resolved, with an anomalous contribution from the sample magnetization that can exhibit extrinsic or intrinsic behavior. We report the first mid-infared (MIR)…

强关联电子 · 物理学 2015-05-14 M. -H. Kim , G. Acbas , M. -H. Yang , M. Eginligil , P. Khalifah , I. Ohkubo , H. Christen , D. Mandrus , Z. Fang , J. Cerne

Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall…

材料科学 · 物理学 2009-11-13 Kazunori Ueno , Tomoteru Fukumura , Hidemi Toyosaki , Masaki Nakano , Masashi Kawasaki

Anomalous Hall effect (AHE) is important for understanding the topological properties of electronic states, and provides insight into the spin-polarized carriers of magnetic materials. AHE has been extensively studied in metallic, but not…

介观与纳米尺度物理 · 物理学 2014-06-24 R. M. Qiao , S. S. Yan , T. S. Xu , M. W. Zhao , Y. X. Chen , G. L. Liu , W. L. Yang , R. K. Zheng , L. M. Mei

Transport and magnetic studies on polycrystalline samples of SrFe1-xCoxO3-d have been carried out to investigate the relationship between the magnetic structure and the anomalous Hall resistivity rH. The hysteretic behavior of the…

强关联电子 · 物理学 2009-11-10 Takahiko Ido , Yukio Yasui , Masatoshi Sato

The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of…

材料科学 · 物理学 2020-02-27 N. Lebedev , M. Stehno , A. Rana , P. Reith , N. Gauquelin , J. Verbeeck , H. Hilgenkamp , A. Brinkman , J. Aarts

The purpose of this study was to investigate the magnetotransport properties of the Ge(0.743)Pb(0.183)Mn(0.074)Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic…

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction.…

介观与纳米尺度物理 · 物理学 2008-09-12 Yong Pu , Daichi Chiba , Fumihiro Matsukura , Hideo Ohno , Jing Shi

The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the…

We measure the anomalous Hall effect (AHE) resistivity $\rho_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $\rho_{xx}^2$, and at higher temperatures, $R_{s}$…

We measure the anomalous Hall effect (AHE) resistivity $\rho_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $\rho_{xx}^2$ in agreement with side jumps and Berry…

强关联电子 · 物理学 2011-12-01 Noam Haham , Yishai Shperber , Moty Schultz , Netanel Naftalis , James W. Reiner , Lior Klein

The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of…

介观与纳米尺度物理 · 物理学 2017-08-11 L. N. Oveshnikov , V. A. Kulbachinskii , A. B. Davydov , B. A. Aronzon , I. V. Rozhansky , N. S. Avkeriev , K. I. Kugel , V. Tripathi

The anomalous Hall coefficient Rs has been studied for the reentrant spin glass system Fe0.7Al0.3 by measuring the magnetization M and the Hall resistivity r_H. We have found that R_s exhibits anomalous temperature dependence at the…

强关联电子 · 物理学 2009-11-07 Taketomo Kageyama , Natsuki Aito , Satoshi Iikubo , Masatoshi Sato

We report anomalous Hall effect (AHE) in single crystals of quasi-two-dimensional Fe$_{3-x}$GeTe$_2$ ($x \approx 0.36$) ferromagnet grown by the flux method which induces defects on Fe site and bad metallic resistivity. Fe K-edge x-ray…

强关联电子 · 物理学 2018-04-18 Yu Liu , Eli Stavitski , Klaus Attenkofer , C. Petrovic

We report the occurrence of ferromagnetic-like anomalous Hall effect (AHE) below $30$ mT in bismuth single and policrystals. The signatures of ferromagnetism in transport are not corroborated in magnetization measurements, thus suggesting…

The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal…

The anomalous Hall effect (AHE), a Hall signal occurring without an external magnetic field, is one of the most significant phenomena. However, understanding the AHE mechanism has been challenging and largely restricted to ferromagnetic…

The interactions between conduction electrons and magnetism can significantly enhance the Hall signal, a phenomenon known as the anomalous Hall effect (AHE). While the AHE is generally not expected in antiferromagnets, a large AHE is…

The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated…

材料科学 · 物理学 2015-03-17 D. Chiba , A. Werpachowska , M. Endo , Y. Nishitani , F. Matsukura , T. Dietl , H. Ohno
‹ 上一页 1 2 3 10 下一页 ›