相关论文: Long-range spatial correlations in the exciton ene…
A microscopic model of a heterostructure with a quantum well (QW) is proposed to study the exciton behavior in an external electric field. The effect of an electric field ranging from 0 to 6 kV/cm applied to the GaAs/AlGaAs QW structure in…
Wave functions of heavy-hole excitons in GaAs/Al$_{0.3}$Ga$_{0.7}$As square quantum wells (QWs) of various widths are calculated by the direct numerical solution of a three-dimensional Schr\"odinger equation using a finite-difference…
Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures…
The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schroedinger equation. The precise results for the…
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such…
We present a first-principle path integral Monte-Carlo (PIMC) study of the binding energy of excitons, trions (positively and negatively charged excitons) and biexcitons bound to single-island interface defects in quasi-two-dimensional…
We show that the correlation between morphological fluctuations of two interfaces confining a quantum well strongly suppresses a contribution of interface disorder to inhomogeneous line width of excitons. We also demonstrate that only…
Exciton excited states in the quantum well are studied via their effect on the nonradiative broadening of the ground exciton resonance. Dependence of the nonradiative broadening of the ground exciton state on the photon energy of additional…
In this Letter we report on lateral diffusion measurements of excitons at low temperature in double quantum wells of various widths. The structure is designed so that excitons live up to 30 $\mu$s and diffuse up to 500 $\mu$m. Particular…
A transition between the strong (coherent) and weak (incoherent) coupling limits of resonant interaction between quantum well (QW) excitons and bulk photons is analyzed and quantified as a function of the incoherent damping rate caused by…
Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a…
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the…
The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a…
The ground state energy of exciton bound by distant ionized donor impurity in quasi-two-dimensional GaAs/AlGaAs semiconductor quantum well (QW) is studied theoretically within the Hartree approach in the effective mass approximation. The…
This letter reports on the growth, structure and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during…
In order to explain and model the inner ring in photoluminescence (PL) patterns of indirect excitons in GaAs/AlGaAs quantum wells (QWs), we develop a microscopic approach formulated in terms of coupled nonlinear equations for the diffusion,…
Using a nonlinear Schr\"odinger equation including short-range two-body attraction and three-body repulsion, we investigate the spatial distribution of indirect excitons in semiconductor coupled quantum wells. The results obtained can…
We consider a model describing the one-dimensional confinement of an exciton in a symmetrical, rectangular quantum-well structure and derive upper and lower bounds for the binding energy $E_b$ of the exciton. Based on these bounds, we study…
Considering effects of electric field on the low temperature absorption line of quantum well excitons, we show that, for moderate strength of the electric field, the main contribution to the field dependence of the line-width results from…
We present high-quality numerical calculations of the exciton center-of-mass dispersion for GaAs/AlGaAs quantum wells of widths in the range 2-20 nm. The k.p-coupling of the heavy- and light-hole bands is fully taken into account. An…