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Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV,…

介观与纳米尺度物理 · 物理学 2014-03-26 Rajesh Kumar , H. S. Mavi , A. K. Shukla

The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $\gamma$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant…

Raman spectroscopic studies of graphene have attracted much interest. The G-band Raman intensity of a single layer graphene on Si substrate with 300 nm SiO2 capping layer is surprisingly strong and is comparable to that of bulk graphite. To…

材料科学 · 物理学 2009-11-13 Yingying Wang , Zhenhua Ni , Zexiang Shen , Haomin Wang , Yihong Wu

Results of room temperature Raman scattering studies of ultrathin graphitic films supported on Si (111)/SiO2 substrates are reported. The results are significantly different from those known for graphite. Spectra were collected using 514 nm…

介观与纳米尺度物理 · 物理学 2015-06-25 Awnish Gupta , Gugang Chen , P. Joshi , S. Tadigadapa , P. C. Eklund

The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN…

CrSBr, a van der Waals material, stands out as an air-stable magnetic semiconductor with appealing intrinsic properties such as crystalline anisotropy, quasi-1D electronic characteristics, layer-dependent antiferromagnetism, and non-linear…

Low-frequency Raman scattering spectra are presented for gold nanocrystals with diameters 3.5 and 13 nm. The frequencies of the Raman peaks but also their number are shown to vary with the nanocrystal size. These results are analyzed using…

介观与纳米尺度物理 · 物理学 2012-02-09 Lucien Saviot , Nicolas Combe , Adnen Mlayah

In order to investigate the origin of the phase transition observed in NaV$_2$O$_5$, as well as its electronic structure, we have measured Raman intensities as a function of the laser wavelength above and below the phase transition…

强关联电子 · 物理学 2015-06-25 M. J. Konstantinovic , Z. V. Popovic , T. Ruf , M. Cardona , A. N. Vasil'ev , M. Isobe , Y. Ueda

Radiative transfer equations are derived and solved for the stimulated Raman scattering of water maser lines in the astrophysical plasmas with electron density of about 10^6 - 10^7 cm-3. In stimulated Raman scattering, the energy of water…

天体物理学 · 物理学 2009-10-31 R. T. Gangadhara , Shuji Deguchi , H. Lesch

Ion track formation, amorphisation, and the formation of porosity in crystalline GaSb induced by 185 MeV $^{197}$Au swift heavy ion irradiation is investigated as a function of fluence and irradiation angle relative to the surface normal.…

材料科学 · 物理学 2020-05-11 C. Notthoff , S. Jordan , A. Hadley , P. Mota-Santiago , R. G. Elliman , W. Lei , N. Kirby , P. Kluth

We investigated Raman spectra of single-layer and multi-layer graphene under ultraviolet laser excitation at the wavelength of 325 nm. It was found that while the G peak of graphene remains pronounced in UV Raman spectra, the 2D band…

材料科学 · 物理学 2015-05-13 Irene Calizo , Igor Bejenari , Muhammad Rahman , Guanxiong Liu , Alexander A. Balandin

Surface enhanced Raman scattering (SERS) effects on tin dioxide in the form of bulk material, nanostructured thin films and colloidal solutions were investigated. Raman spectra are characterized by the three Raman scattering peaks at 478,…

材料科学 · 物理学 2015-06-03 Enza Fazio , Fortunato Neri , Salvatore Savasta , Salvatore Spadaro , Sebastiano Trusso

Stimulated Raman spectroscopy has become a powerful tool to study the spatiodynamics of molecular bonds with high sensitivity, resolution and speed. However, sensitivity and speed of state-of-the-art stimulated Raman spectroscopy are…

The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS$_{2}$ encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV,…

Resonant inelastic (Raman) light scattering off neutral GaAs quantum dots which contain a mean number, N=42, of electron-hole pairs is computed. We find Raman amplitudes corresponding to strongly collective final states (charge-density…

介观与纳米尺度物理 · 物理学 2009-11-07 Alain Delgado , Augusto Gonzalez , Eduardo Menendez-Proupin

Raman scattering spectroscopy is widely used as an analytical technique in various fields, but its measurement process tends to be slow due to the low scattering cross-section. In the last decade, various broadband coherent Raman scattering…

光学 · 物理学 2025-05-06 Takuma Nakamura , Kazuki Hashimoto , Takuro Ideguchi

In this work, we present a high pulse energy multi-wavelength Raman laser spanning from 1.53 um up to 2.4 um by employing the cascaded rotational stimulated Raman scattering (SRS) effect in a 5-m hydrogen (H2) -filled nested anti-resonant…

Phonon spectra have been investigated by micro-Raman scattering from 290 to 20K. New peaks at 500 and 674 cm-1 appear below 250K in MgB2. These peaks are explained by the Fermi resonance, where Raman-active E2g intereacts with the overtone…

超导电性 · 物理学 2007-05-23 N. Ogita , T. Kariya , K. Hiraoka , J. Nagamatsu , T. Muranaka , H. Takagiwa , J. Akimitsu , M. Udagawa

Raman scattering experiments from silver nanocrystals embedded in films of amorphous silica are reported. In addition to the low-frequency peak due to vibrational quadrupolar modes, a broadband is observed in the high-frequency range, with…

凝聚态物理 · 物理学 2007-05-23 H. Portales , E. Duval , L. Saviot , M. Fujii , M. Sumitomo , S. Hayashi

Intermediate frequency range (511 - 514 cm-1) Si phonons in Si-SiO2 nanocomposites are shown to have contribution from both core1 and surface/interface1 Si phonons, where, ratio of contribution of the two depends on the size of a Si…

介观与纳米尺度物理 · 物理学 2015-03-13 Ekta Rani , Alka Ingale , A. Chaturvedi , M. P. Joshi , L. M. Kukreja
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