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相关论文: Decoherence of electron spin qubits in Si-based qu…

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We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their…

介观与纳米尺度物理 · 物理学 2018-05-29 Viktoriia Kornich , Christoph Kloeffel , Daniel Loss

Long-range quantum communication for spin qubits is an important open problem. Here we study decoherence of an electron spin qubit that is being transported in a moving quantum dot. We focus on spin decoherence due to spin-orbit interaction…

介观与纳米尺度物理 · 物理学 2013-08-12 Peihao Huang , Xuedong Hu

We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum…

介观与纳米尺度物理 · 物理学 2015-03-17 Martin Raith , Peter Stano , Jaroslav Fabian

We consider spin-lattice relaxation processes for electrons trapped in lateral Si quantum dots in a $[001]$ inversion layer. Such dots are characterized by strong confinement in the direction perpendicular to the surface and much weaker…

材料科学 · 物理学 2009-11-07 B. A. Glavin , K. W. Kim

Electron spin decoherence caused by elastic spin-phonon processes is investigated comprehensively in a zero-dimensional environment. Specifically, a theoretical treatment is developed for the processes associated with the fluctuations in…

其他凝聚态物理 · 物理学 2009-11-11 Y. G. Semenov , K. W. Kim

Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture…

材料科学 · 物理学 2007-10-24 Charles Tahan

We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…

介观与纳米尺度物理 · 物理学 2009-11-07 Rogerio de Sousa , S. Das Sarma

We consider the decoherence of a single localized electron spin due to its coupling to the lattice nuclear spin bath in a semiconductor quantum computer architecture. In the presence of an external magnetic field and at low temperatures,…

介观与纳米尺度物理 · 物理学 2009-11-11 W. M. Witzel , S. Das Sarma

The spin of an electron in a semiconductor quantum dot represents a natural nanoscale solid state qubit. Coupling to nuclear spins leads to decoherence that limits the number of allowed quantum logic operations for this qubit. Traditional…

介观与纳米尺度物理 · 物理学 2016-07-13 Alexander Bechtold , Fuxiang Li , Kai Müller , Tobias Simmet , Per-Lennart Ardelt , Jonathan J. Finley , Nikolai A. Sinitsyn

The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field…

We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. Hybrid qubit behaves as a charge qubit when the detuning is close to zero and as spin qubit for large detuning values. It is…

量子物理 · 物理学 2019-07-24 E. Ferraro , M. Fanciulli , M. De Michielis

Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins…

介观与纳米尺度物理 · 物理学 2012-07-12 Yongjie Hu , Ferdinand Kuemmeth , Charles M. Lieber , Charles M. Marcus

Interaction of solid state qubits with environmental degrees of freedom strongly affects the qubit dynamics, and leads to decoherence. In quantum information processing with solid state qubits, decoherence significantly limits the…

介观与纳米尺度物理 · 物理学 2010-02-26 Luca Chirolli , Guido Burkard

We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as…

介观与纳米尺度物理 · 物理学 2012-05-15 Wayne M. Witzel , Rajib Rahman , Malcolm S. Carroll

Spin relaxation via electron-phonon interaction is an important decoherence mechanism for spin qubits. In this work, we study spin relaxation in hexagonal (2H) germanium, a novel direct-gap semiconductor showing great potential to combine…

介观与纳米尺度物理 · 物理学 2026-01-21 Baksa Kolok , György Frank , András Pályi

Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…

介观与纳米尺度物理 · 物理学 2013-02-01 Martin Raith , Peter Stano , Jaroslav Fabian

Paramagnetic defects in diamond and hexagonal boron nitride possess a unique combination of spin and optical properties that make them prototypical solid-state qubits. Despite the coherence of these spin qubits being critically limited by…

量子物理 · 物理学 2023-02-10 Sourav Mondal , Alessandro Lunghi

The control of discrete quantum states in solids and their use for quantum information processing is complicated by the lack of a detailed understanding of the mechanisms responsible for qubit decoherences. For spin qubits in semiconductor…

介观与纳米尺度物理 · 物理学 2015-11-13 A. Bechtold , D. Rauch , F. Li , T. Simmet , P. -L. Ardelt , A. Regler , K. Müller , N. A. Sinitsyn , J. J. Finley

Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices.…

In this paper we study the low temperature kinetics of the electrons in the system composed of a quantum dot connected to two leads by solving the equation of motion. The decoherence and the relaxation of the system caused by the gate…

强关联电子 · 物理学 2009-11-13 M. Q. Weng
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