相关论文: RK/100 and RK/200 Quantum Hall Array Resistance St…
We present a theoretical framework to describe the integer quantum Hall effect (IQHE) in three-dimensional (3D) electron systems. This extends our previous single-electron approach, which was successfully applied to two-dimensional (2D)…
The Hall resistance of a homogeneous electron system is well known to be anti-symmetric with respect to the magnetic field and the sign of charge carriers. We have observed that such symmetries no longer hold in planar hybrid structures…
The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field. This so-called quantum anomalous Hall effect (QAHE) is…
Symmetry, dimensionality, and interaction are crucial ingredients for phase transitions and quantum states of matter. As a prominent example, the integer quantum Hall effect (QHE) represents a topological phase generally regarded as…
The quantum Hall and longitudinal resistances in multi-terminal ferromagnetic graphene p-n junctions under a perpendicular magnetic field are investigated. In the Hall measurements, the transverse contacts are assumed to be located at p-n…
Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at $\nu_T=1$ are reported. The maximum, or critical current for tunneling at $\nu_T=1$, is shown to be a well-defined global property of the coherent…
Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…
We have determined the finite temperature coherence length of edge states in the Integer Quantum Hall Effect (IQHE) regime. This was realized by measuring the visibility of electronic Mach-Zehnder interferometers of different sizes, at…
The crossover from the quantum Hall regime to the Hall-insulator is investigated by varying the strength of the diagonal disorder in a 2d tight-binding model. The Hall and longitudinal conductivities and the behavior of the critical states…
We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $\nu=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high…
We show that, at low temperatures, macroscopic inhomogeneities of the electron density in the interior of a finite sample cause a reduction in the measured conductivity peak heights $\sigma_{xx}^{\rm max}$ compared to the universal values…
We prove by construction that the Bravyi-Poulin-Terhal bound on the spatial density of stabilizer codes does not generalize to stabilizer circuits. To do so, we construct a fault tolerant quantum computer with a coding rate above 5% and…
Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate.…
The quantum Hall effect in ultra-high mobility GaAs/AlGaAs has been measured and plateaus are found at many different fractions. The resistivity is quantized as \rho =h/ie^2 where i exhibits many different values. The fractions 5/3, 8/5,…
An experimental analysis for two parallel conducting layers determines the full resistivity tensor of the parallel layer, at magnetic fields where the other layer is in the quantum Hall regime. In heterostructures which exhibit parallel…
The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and…
Kang et al. have recently observed a remarkable zero-bias anomaly in the spectrum for electron tunneling between two 2D electron gases separated laterally by a narrow but high barrier in the presence of a perpendicular quantising magnetic…
Accurate measurement of the electric current requires a stable and calculable resistor for an ideal current to voltage conversion. However, the temporal resistance drift of a physical resistor is unavoidable, unlike the quantum Hall…
Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2…
Hard Attention Mechanisms (HAMs) effectively filter essential information discretely and significantly boost the performance of machine learning models on large datasets. Nevertheless, they confront the challenge of non-differentiability,…