相关论文: Low-field magnetoresistance in GaAs 2D holes
Experiments on high-quality GaAs (311)A two-dimensional holes at low temperatures reveal a remarkable dependence of the magnetoresistance, measured with an in-plane magnetic field ($B$), on the direction of $B$ relative to both the crystal…
We studied low temperature (T=50mK) in-plane magnetoresistance of a dilute two-dimensional hole system in GaAs/AlGaAs heterostructure that exhibits an apparent metal-insulator transition. We found an anisotropic magnetoresistance, which…
We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at $B \simeq 1$ kG, where the magnetoresistivity develops a minimum emerging at $T \lesssim 2$…
We study the transport properties of the two-dimensional electron gas in AlGaAs/GaAs heterostructures in parallel to the interface magnetic fields at low temperatures. The magnetoresistance in the metallic phase is found to be positive and…
We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation-doped with carbon…
The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…
We report on the growth and electrical characterization of a series of two-dimensional hole systems (2DHSs) used to study the density dependence of low temperature mobility in 20 nm GaAs/AlGaAs quantum wells. The hole density was controlled…
We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to…
We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in…
Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the…
The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport…
We report on a strong transport anisotropy in a 2D hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the…
Magnetoresistance data taken along $[\bar{2}33]$ and $[01\bar{1}]$ directions in a GaAs/AlGaAs two-dimensional hole sample with van der Pauw geometry exhibit significant anisotropy at half-integer filling factors. The anisotropy appears to…
We report on nonlinear transport measurements in a GaAs/AlGaAs quantum well exhibiting a colossal negative magnetoresistance effect. Under applied dc bias, the magnetoresistance becomes nonmonotonic, exhibiting distinct extrema that move to…
In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We…
High quality strongly correlated two-dimensional (2D) electron systems at low temperatures $T\rightarrow 0$ exhibits an apparent metal-to-insulator transition (MIT) at a large $r_s$ value around 40. We have measured the magnetoresistance of…
We calculate using the Boltzmann transport theory the density dependent mobility of two-dimensional (2D) electrons in GaAs, SiGe and AlAs quantum wells as well as of 2D holes in GaAs quantum wells. The goal is to precisely understand the…
We report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG…
Owing to their large effective mass, strong and tunable spin-orbit coupling, and complex band-structure, two-dimensional hole systems (2DHSs) in GaAs quantum wells provide rich platforms to probe exotic many-body physics, while also…
We report a magnetotransport study of an ultra-high mobility ($\bar{\mu}\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed…