相关论文: Theory of Angular Magnetoresistance in CPP spin va…

The electric resistance of ferromagnet/normal-metal/ferromagnet perpendicular spin valves depends on the relative angle between the magnetization directions. In contrast to common wisdom, this angular magnetoresistance is found to be not…

The spin-valve complex magnetoimpedance of symmetric ferromagnet/normal metal/ferromagnet junctions is investigated within the drift-diffusion (standard) model of spin injection. The ac magnetoresistance---the real part difference of the…

The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of…

We theoretically study the magnetoresistance of a CPP-GMR system with current confined paths (CCP) in the framework of Valet-Fert theory. The continuity equations for charge and spin currents are numerically solved with the…

Magnetoresistance measurements in the CPP geometry have been performed on single electrodeposited Co nanowires exchange biased on one side by a sputtered amorphous GdCo layer. This geometry allows the stabilization of a single domain wall…

It is shown that spin valves under suitable symmetry conditions exhibit an ON-OFF response to a spin battery, and are therefore perfect spin transistors. While a spin valve driven by a charge battery displays the usual GMR (Giant…

Oscillations of magnetoresistance and thermo-electric power (TEP) vs. both nonmagnetic spacer as well as ferromagnetic slab thicknesses are studied in the current-perpendicular-to-plane (CPP) geometry, in terms of a single-band…

We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…

The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix -- the so-called "spin-drag resistivity". It is…

A study of transverse tail-to-tail magnetic domain walls (DW) in novel current perpendicular to the plane (CPP) spin valves (SV) of various dimensions is presented. For films with dimensions larger than the DW width, we find that DW motion…

Joint influence of two effects, namely, nonequilibrium spin injection by current, and current induced surface torque, on spin-valve type ferromagnetic metallic junctions is considered theoretically. The CPP configuration is assumed. The…

We present a versatile method for detecting the presence and motion of a trapped domain wall in a narrow ferromagnetic layer using current-perpendicular-to-plane (CPP) giant magnetoresistance (MR). The CPP-MR response to small motions of…

Magnetic and transport properties are explored in the current perpendicular-to-plane (CPP) spin salves with Cr doped wide band gap semiconductor ZnTe as one of the ferromagnetic electrodes. A negative magnetoresistance is observed in these…

Recent experimental measurements of magnetoresistance in dual spin valves [A. Aziz et al., Phys. Rev. Lett. 103, 237203 (2009)] reveal some nonlinear features of transport, which have not been observed in other systems. We propose a…

We report the current-perpendicular-to-plane giant magnetoresistance of a spin valve with Co2MnSi (CMS) Heusler alloy ferromagnetic electrodes. A multilayer stack of Cr/Ag/Cr/CMS/Cu/CMS/Fe25Co75/Ir28Mn72/Ru was deposited on a MgO (001)…

Fluctuations of the magnetization in spin valves are shown to cause resistance noise that strongly depends on the magnetic configuration. Due to the applied external field and the dynamic exchange interaction through the normal metal…

Measurements of Giant Magnetoresistance (GMR) in ferromagnetic/non-magnetic (F/N) multilayers with Current flow Perpendicular to the layer Planes (CPP-geometry) can give better access to the fundamental physics underlying GMR than…

Spin valves incorporating perpendicularly magnetized materials are promising structures for memory elements and high-frequency generators. We report the angular dependence of the spin-transfer torque in spin valves with perpendicular…

Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of…

A hybrid ferromagnet-superconductor spin valve is proposed. Its operation relies on the interplay between nonequilibrium transport and proximity-induced exchange coupling in superconductors. Huge tunnel magnetoresistance values as large as…