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The parent compounds of the copper oxide high-Tc superconductors are unusual insulators. Superconductivity arises when they are properly doped away from stoichiometry1. In Bi2Sr2CaCu2O8+x, superconductivity results from doping with excess…

The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show…

Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of…

强关联电子 · 物理学 2019-02-05 F. Massee , Y. K. Huang , M. S. Golden , M. Aprili

High-temperature superconductors at zero doping can be considered strongly correlated two-dimensional Mott insulators. The understanding of the connection between the superconductor and the Mott insulator hits at the heart of the…

强关联电子 · 物理学 2009-05-30 M. Civelli

The spatial variation of electronic states was imaged in the lightly doped Mott insulator Ca_{2-x}Na_{x}CuO_{2}Cl_{2} using scanning tunneling microscopy / spectroscopy (STM/STS). We observed nano-scale domains with a high local density of…

超导电性 · 物理学 2009-09-29 Y. Kohsaka , K. Iwaya , S. Satow , T. Hanaguri , M. Azuma , M. Takano , H. Takagi

We perform theoretical calculations to obtain a distribution of local d-wave superconducting gaps $\Delta_0({r})$ for a high temperature superconducting (HTSC) series in a disordered superconductor with an average doping level $<\rho>$. To…

超导电性 · 物理学 2009-11-11 E. S. Caixeiro , A. Troper , E. V. L. de Mello

By using scanning tunneling microscopy (STM) / spectroscopy (STS), we systematically characterize the electronic structure of lightly doped 1T-TiSe2, and demonstrate the existence of the electronic inhomogeneity and the pseudogap state. It…

A microscopic theory is presented for the local moment formation near a non-magnetic impurity or a copper defect in high-T_c superconductors. We use a renormalized meanfield theory of the t-J model for a doped Mott insulator and study the…

强关联电子 · 物理学 2009-11-07 Ziqiang Wang , Patrick A. Lee

The tunneling spectrum of an inhomogeneously doped extended Hubbard model is calculated at the mean field level. Self-consistent solutions admit both superconducting and antiferromagnetic order, which coexist inhomogeneously because of…

超导电性 · 物理学 2009-11-10 W. A. Atkinson

It is widely believed that high-temperature superconductivity in the cuprates emerges from doped Mott insulators. The physics of the parent state seems deceivingly simple: The hopping of the electrons from site to site is prohibited because…

In this paper we analyze, using scanning tunneling spectroscopy (STS), the local density of electronic states (LDOS) in nearly optimally doped BSCCO in zero field. We see both dispersive and non-dispersive spatial LDOS modulations as a…

超导电性 · 物理学 2009-11-10 A. Fang , C. Howald , N. Kaneko , M. Greven , A. Kapitulnik

We investigate superconductivity that may exist in the doped BaCoSO, a multi-orbital Mott insulator with a strong antiferromagnetic ground state. The superconductivity is studied in both t-J type and Hubbard type multi-orbital models by…

超导电性 · 物理学 2018-06-21 Shengshan Qin , Yinxiang Li , Qiang Zhang , Congcong Le , Jiangping Hu

The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that…

We give a brief review of the Mott-Kondo scenario and its consequence in the recently-discovered infinite-layer nickelate superconductors. We argue that the parent state is a self-doped Mott insulator and propose an effective $t$-$J$-$K$…

强关联电子 · 物理学 2022-01-11 Yi-feng Yang , Guang-Ming Zhang

Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped…

强关联电子 · 物理学 2022-06-22 Yan-Ling Xiong , Jia-Qi Guan , Rui-Feng Wang , Can-Li Song , Xu-Cun Ma , Qi-Kun Xue

Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum…

A key open issue in condensed matter physics is how quantum and classical correlations emerge in an unconventional superconductor from the underlying normal state. We study this problem in a doped Mott insulator with information theory…

强关联电子 · 物理学 2022-03-01 C. Walsh , M. Charlebois , P. Sémon , G. Sordi , A. -M. S. Tremblay

We study the superconducting state of the hole-doped two-dimensional Hubbard model using Cellular Dynamical Mean Field Theory, with the Lanczos method as impurity solver. In the under-doped regime, we find a natural decomposition of the…

强关联电子 · 物理学 2008-02-04 M. Civelli , M. Capone , A. Georges , K. Haule , O. Parcollet , T. D. Stanescu , G. Kotliar

Despite many efforts to rationalize the strongly correlated electronic ground states in doped Mott insulators, the nature of the doping induced insulator to metal transition is still a subject under intensive investigation. Here we probe…

We study the tunneling density of states (TDOS) in one-dimensional Mott insulators at energies below the charge gap. By employing nonlinear Luttinger liquid theory and density-matrix renormalization group (DMRG) simulations, we predict that…

强关联电子 · 物理学 2026-01-06 Rodrigo G. Pereira , Bruno F. Marquez , Karen Hallberg , Tim Bauer , Reinhold Egger
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