相关论文: Soliton Tunneling Transistor

We evaluate the detector nonideality (and energy sensitivity) of a normal-state single-electron transistor (SET) in the cotunneling regime in a two-charge-state approximation. For small conductances and at zero temperature, the SET's…

We study solitons in the condensate trapped in a double-well potential with far-separated wells, when the s-wave scattering length has different signs in the two parts of the condensate. By employing the coupled-mode approximation it is…

The electrostatic behaviour of an 1,3-Cyclobutadiene (C$_{4}$H$_{4}$) based Single Molecular Transistor (SMT) has been investigated using the first principle calculation based on Density functional Theory and non-equilibrium Green's…

Theoretical studies of the tunnelling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green's function method within the Anderson model with…

We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…

We study the model of a molecular switch comprised of a molecule with a soft vibrational degree of freedom coupled to metallic leads. In the presence of strong electron-ion interaction, different charge states of the molecule correspond to…

Dots are ideal systems to study fundamentals on heat transfer at the nanoscale and promising nanoscale heat-engines and thermal devices. Here, we report on the validation of our theoretical model on the thermal conductance of a metallic dot…

We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…

We numerically investigate the soliton tunnelling process in double-well potential trapped Bose-Einstein condensate. Comparing with the usual low energy few particle tunnelling process, we find that the soliton tunnelling leads to massive…

Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete…

We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET).…

We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a…

We investigate tunneling behavior between two bright solitons in a Bose-Einstein condensate with attractive contact interactions between atoms. The explicit tunneling properties including tunneling particles and oscillation period are…

The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…

We propose a selfconsistent microscopic model of vertical sequential tunneling through a multi-quantum well.The model includes a detailed description of the contacts,uses the Transfer Hamiltonian for expressions of the current and it treats…

A new manifestation of interlayer coherence in strongly polarized double layer quantum Hall systems with total filling factor $\nu=1$ in the presence of a small or zero tunneling is theoretically predicted. It is shown that moving (for…

We study a tunnel contact that acts as charge detector for a single-electron transistor (SET) focusing on correlations between the detector current and the current through the SET. This system can be described fully by a Markovian master…

We consider a model of a quantum-mechanical resonator capacitively coupled to a single electron transistor (SET). The tunnel current in the SET is modulated by the vibrations of the resonator, and thus the system operates as a displacement…

Experiments on the direction-resolved full-counting statistics of single-electron tunneling allow testing the fundamentally important Fluctuation Theorem (FT). At the same time, the FT provides a frame for analyzing such data. Here we…