相关论文: Spin injection through the depletion layer: a theo…
The ability to induce regions of high and low ionic concentration adjacent to a permeselective membrane or nanochannel subject to an externally applied electric field (a phenomenon termed concentration-polarization) has been used for a…
We propose a ``spin-guide'' source for generation of electric currents with a high degree of spin polarization, allowing long-distance transmission of the spin-polarization. In the spin-guide scheme proposed here, a non-magnetic conducting…
A quantitative investigation of spin-pumping-induced spin-transport in n-GaAs was conducted at room temperature (RT). GaAs has a non-negligible spin orbit interaction, so that electromotive force due to the inverse spin Hall effect (ISHE)…
In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation…
The p-n junction has provided the basis for the semiconductor-device industry. Investigations of p-n junctions based on Mott insulators is still in its infancy. Layered Mott insulators, such as the cuprates or other transition metal-oxides,…
We propose a semi-classical model for femtosecond-laser induced demagnetization due to spin-polarized excited electron diffusion in the super-diffusive regime. Our approach treats the finite elapsed time and transport in space between…
Insertion of a resistive contact between a ferromagnetic metal and a semiconductor microstructure is of critical importance for achieving efficient spin injection into a semiconductor. However, the equations of the diffusion theory are…
We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by $p_{x,y}\leftrightarrow p_z$ hybridization due to intra-atomic…
Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…
Recent observations of considerable spin polarization in photoemission from metal surfaces through monolayers of chiral molecules were followed by several efforts to rationalize the results as the effect of spin-orbit interaction that…
The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry. This approach was used to study the spin-dependent…
Strongly correlated materials are expected to feature unconventional transport properties, such that charge, spin, and heat conduction are potentially independent probes of the dynamics. In contrast to charge transport, the measurement of…
The combination of protrusions and retractions in the movement of polarized cells leads to understand the effect of possible synchronisation between the two ends of the cells. This synchronisation, in turn, could lead to different dynamics…
We study spin and charge diffusion in metallic-ferromagnet/topological-insulator junctions. The coupled diffusion equations are derived perturbatively with respect to the strength of the interlayer tunneling. We calculate spin accumulation…
Transfer-matrix methods are used for a tight-binding description of electron transport in graphene-like geometries, in the presence of spin-orbit couplings. Application of finite-size scaling and phenomenological renormalization techniques…
A system of drift-diffusion equations with electric field under Dirichlet boundary conditions is analyzed. The system of strongly coupled parabolic equations for particle density and spin density vector describes the spin-polarized…
We demonstrate that a spin degree of freedom can introduce additional texture to higher order topological insulators (HOTIs), manifesting itself in novel topological invariants, phases, and phase transitions. Spin-polarized mid-gap corner…
Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and…
We investigated the transport properties in a normal metal/ferromagnet/normal metal/superconductor junction based on semi-Dirac materials with inverted energy gap. With a scattering matrix approach, we show that the electron transport in…