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相关论文: Quantum Hall Effect: the resistivity of a two-dime…

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We demonstrate that in strong quantum limit the thermoelectric Peltier effect could define the longitudinal resistivity of dissipationless two-dimensional electron(hole) gas. The current results in heating(cooling) at first(second) Hall bar…

介观与纳米尺度物理 · 物理学 2007-05-23 M. V. Cheremisin

We calculate the zero magnetic field resistivity, taking into account the degeneracy of the 2D electron (hole) gas and the thermal correction due to the combined Peltier and Seebeck effects. The resistivity is found to be universal function…

介观与纳米尺度物理 · 物理学 2007-05-23 M. V. Cheremisin

We calculate the resistivity of 2D electron (hole) gas, taking into account the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects. The resistivity is found to be universal function of temperature,…

介观与纳米尺度物理 · 物理学 2009-11-07 M. V. Cheremisin

The thermodynamic potential of an ideal nonrelativistic gas of two-dimensional electrons in crossed uniform magnetic and electric fields is constructed. For low temperatures and very weak electric fields, it is shown that the Hall…

凝聚态物理 · 物理学 2007-05-23 Choon-Lin Ho , V. R. Khalilov , Chi Yang

The resistivity components of 3D electron gas placed in quantizing magnetic field are calculated taking into account the correction caused by combined action of the Peltier and Seebeck thermoelectric effects. The longitudinal, transverse…

介观与纳米尺度物理 · 物理学 2015-02-24 M. V. Cheremisin

Usually the conductivity is quantized as the inverse of the resistivity, \rho=hc/ie^2, \sigma=ie^2/hc and the velocity versus the electric field is linear, v=\mu E where \mu is the mobility of the electrons.However,when the applied electric…

介观与纳米尺度物理 · 物理学 2007-05-23 Keshav N. Shrivastava

The melting temperature ($T_m$) of a solid is generally determined by the pressure applied to it, or indirectly by its density ($n$) through the equation of state. This remains true even for helium solids\cite{wilk:67}, where quantum…

The longitudinal resistivity of two dimensional (2D) electrons placed in strong magnetic field is significantly reduced by applied electric field, an effect which is studied in a broad range of magnetic fields and temperatures in GaAs…

介观与纳米尺度物理 · 物理学 2009-07-20 Jing Qiao Zhang , Sergey Vitkalov , A. A. Bykov

We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de…

介观与纳米尺度物理 · 物理学 2009-11-11 J. Cumings , L. S. Moore , H. T. Chou , K. C. Ku , S. A. Crooker , N. Samarth , D. Goldhaber-Gordon

The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous…

介观与纳米尺度物理 · 物理学 2010-11-01 K. -J. Friedland , A. Siddiki , R. Hey , H. Kostial , A. Riedel , D. K. Maude

This paper reports on an experimental study of the contact resistance of Hall bars in the Quantum Hall Effect regime while increasing the current through the sample. These measurements involve also the longitudinal resistance and they have…

介观与纳米尺度物理 · 物理学 2009-11-10 Y. M. Meziani , C. Chaubet , S. Bonifacie , B. Jouault , A. Raymond , W. Poirier , F. Piquemal

It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…

介观与纳米尺度物理 · 物理学 2009-10-31 S. S. Murzin , I. Claus , A. G. M. Jansen , N. T. Moshegov , A. I. Toropov , K. Eberl

We investigate the effect of electron-electron interaction on the temperature dependence of the Hall coefficient of 2D electron gas at arbitrary relation between the temperature $T$ and the elastic mean-free time $\tau$. At small…

无序系统与神经网络 · 物理学 2009-11-07 Gabor Zala , B. N. Narozhny , I. L. Aleiner

Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic…

We have investigated the Hall resistance $R_H$ near the plateau-insulator transition of a two-dimensional electron gas in the quantum critical regime. High-field magnetotransport data taken on a low-mobility InGaAs/InP heterostructure with…

介观与纳米尺度物理 · 物理学 2009-11-11 D. T. N. de Lang , L. A. Ponomarenko , A. de Visser , A. M. M. Pruisken

The chiral Luttinger liquid model for the edge dynamics of a two-dimensional electron gas in a strong magnetic field is derived from coarse-graining and a lowest Landau level projection procedure at arbitrary filling factors $\nu<1$ --…

介观与纳米尺度物理 · 物理学 2009-11-10 Roberto D'Agosta , Roberto Raimondi , Giovanni Vignale

To fully appreciate the impacts that the discovery of the quantum Hall effect had on electrical metrology, it may benefit the reader to cultivate a general understanding of the phenomenon. Two-dimensional electron systems can exhibit many…

介观与纳米尺度物理 · 物理学 2022-02-15 Albert F. Rigosi

The effect of a DC electric field on the longitudinal resistance of highly mobile two dimensional electrons in heavily doped GaAs quantum wells is studied at different magnetic fields and temperatures. Strong suppression of the resistance…

介观与纳米尺度物理 · 物理学 2015-06-25 Jing-qiao Zhang , Sergey Vitkalov , A. A. Bykov , A. K. Kalagin , A. K. Bakarov

The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…

We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers…

介观与纳米尺度物理 · 物理学 2009-11-11 V. T. Renard , I. V. Gornyi , O. A. Tkachenko , V. A. Tkachenko , Z. D. Kvon , E. B. Olshanetsky , A. I. Toropov , J. -C. Portal
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