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相关论文: Gate-Controlled Electron Spin Resonance in a GaAs/…

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We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2…

材料科学 · 物理学 2009-12-20 S. Shankar , A. M. Tyryshkin , S. Avasthi , S. A. Lyon

Direct electron spin resonance (ESR) on a high mobility two dimensional electron gas in a single AlAs quantum well reveals an electronic $g$-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 Gauss. The ESR…

介观与纳米尺度物理 · 物理学 2009-11-11 M. Schulte , J. G. S. Lok , G. Denninger , W. Dietsche

Electrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under the microwave and radio- frequency…

介观与纳米尺度物理 · 物理学 2009-11-07 Chris Hillman , H. W. Jiang

We present time-resolved Kerr rotation measurements of electron spin dynamics in a GaAs/AlGaAs heterojunction system that contains a high-mobility two-dimensional electron gas (2DEG). Due to the complex layer structure of this material the…

介观与纳米尺度物理 · 物理学 2015-05-14 P. J. Rizo , A. Pugzlys , A. Slachter , S. Z. Denega , D. Reuter , A. D. Wieck , P. H. M. van Loosdrecht , C. H. van der Wal

Spin currents in channels of a high mobility GaAs/AlGaAs two-dimensional electron gas are generated and detected using spin-polarized quantum point contacts. We have recently shown that the relaxation length of spin currents is resonantly…

介观与纳米尺度物理 · 物理学 2012-08-16 S. M. Frolov , W. W. Yu , S. Luescher , J. A. Folk , W. Wegscheider

In this theoretical study we qualitatively and quantitatively investigate the electric dipole spin resonance (EDSR) in a single Si/SiGe quantum dot in the presence of a magnetic field gradient, e.g., produced by a ferromagnet. We model a…

介观与纳米尺度物理 · 物理学 2016-06-01 Marko J. Rančić , Guido Burkard

We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the…

介观与纳米尺度物理 · 物理学 2009-11-11 S. Masubuchi , K. Hamaya , T. Machida

Cyclotron resonance (CR) is considered one of the fundamental phenomena in conducting systems. In this paper, we study CR in a gated two-dimensional (2D) electron system (ES). Namely, we analyze the absorption of electromagnetic radiation…

介观与纳米尺度物理 · 物理学 2021-03-08 A. A. Zabolotnykh , V. A. Volkov

Time-resolved Faraday rotation is used to measure the coherent electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating. We show that the electron spin precession frequency can be modified by…

介观与纳米尺度物理 · 物理学 2007-05-23 L. Meier , G. Salis , C. Ellenberger , E. Gini , K. Ensslin

Hole-spin qubits enable fast, all-electrical spin manipulation through electric-dipole spin resonance (EDSR), arising from two microscopic mechanisms rooted in their intrinsically strong spin-orbit interaction. Depending on how the electric…

Recent advances in scanning tunneling microscopy have enabled quantum-coherent control of single surface spins via all-electric electron spin resonance (ESR). Such control requires magnetoelectric coupling, since spin resonance is a…

介观与纳米尺度物理 · 物理学 2025-10-31 Xue Zhang , Jose Reina-Gálvez , Di'an Wu , Jan Martinek , Andreas J. Heinrich , Taeyoung Choi , Christoph Wolf

An all-electrical spin resonance effect in a GaAs few-electron double quantum dot is investigated experimentally and theoretically. The magnetic field dependence and absence of associated Rabi oscillations are consistent with a novel…

介观与纳米尺度物理 · 物理学 2009-11-13 E. A. Laird , C. Barthel , E. I. Rashba , C. M. Marcus , M. P. Hanson , A. C. Gossard

The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect…

Electrically driven spin resonance (EDSR) is an established tool for controlling semiconductor spin qubits. Here, we theoretically study a frequency-mixing variant of EDSR, where two driving tones with different drive frequencies are…

介观与纳米尺度物理 · 物理学 2022-10-21 Zoltán György , András Pályi , Gábor Széchenyi

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit…

Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a…

介观与纳米尺度物理 · 物理学 2024-04-24 Zhanning Wang , Abhikbrata Sarkar , S. D. Liles , Andre Saraiva , A. S. Dzurak , A. R. Hamilton , Dimitrie Culcer

We observe the noise spectrum of electron spins in bulk GaAs by Faraday rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron spin dynamics in semiconductors. We measure exemplarily the…

其他凝聚态物理 · 物理学 2009-11-11 M. Oestreich , M. Roemer , R. J. Haug , D. Haegele

We demonstrate that the spin-polarized electron current can interact with a microwave electric field in a resonant manner. The spin-orbit interaction gives rise to an effective magnetic field proportional to the electric current. In the…

材料科学 · 物理学 2009-11-10 B. A. Glavin , K. W. Kim

Terahertz spectroscopy experiments at magnetic fields and low temperatures were carried out on samples of different gate shapes processed on a high electron mobility GaAs/AlGaAs heterostructure. For a given radiation frequency, multiple…

介观与纳米尺度物理 · 物理学 2015-02-10 M. Białek , M. Czapkiewicz , J. Wróbel , V. Umansky , J. Łusakowski

We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological…

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