相关论文: Is CeNiSn the Kondo semiconductor?: break-junction…
Silicon is a key semiconducting material for electrical devices and hybrid quantum systems where low temperatures and zero-spin isotopic purity can enhance quantum coherence. Electrical conductivity in Si is characterised by carrier freeze…
We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can…
In this work the theoretical and experimental investigations of Co2TiZ (Z = Si, Ge, or Sn) compounds are reported. Half-metallic ferromagnetism is predicted for all three compounds with only two bands crossing the Fermi energy in the…
Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and…
Tunneling data on magnesium diboride, MgB_2, are reviewed with a particular focus on superconductor-insulator-superconductor (SIS) junctions formed by a break-junction method. The collective tunneling literature reveals two distinct energy…
Magnetic field and electrostatically tuned superconductor-insulator (SI) transitions of ultrathin metal films with levels of disorder that place them near the disorder-tuned SI transition appear to be direct, continuous quantum phase…
A non-band theory is developed to describe the superconductor-insulator (SI) transtition in resistively shunted, single Josephson junctions. The $I-V$ characteristic is formulated by a Landauer-like formula and evaluated by the…
We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces. Shubni…
Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and…
New materials are currently sought for use in spintronics applications. Ferromagnetic materials with half metallic properties are valuable in this respect. Here we present the electronic structure and magnetic properties of binary compounds…
Phase-coherent diffusive transport through mesoscopic hybrid superconductor/normal metal tunneling structures is investigated. For a N-s-S two-barrier tunneling system with bulk S and N electrodes coupled by a mesoscopic superconducting…
We calculate Ic(T) and Rn for both coherent and incoherent electron tunneling across a c-axis break junction between nu=s,d_x^2-y^2-wave superconducting half spaces, each with c-axis bandwidth 2J. Coherent quasiparticle tunneling only…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
Certain zero-bias anomalies (ZBAs) in the voltage, temperature and magnetic field dependence of the conductance $G(V,T,H)$ of quenched Cu point contacts have previously been interpreted to be due to non-magnetic 2-channel Kondo (2CK)…
Optical conductivity [$\sigma(\omega)$] of the Kondo semiconductor YbB$_{12}$ has been measured over wide ranges of temperature ($T$=8$-$690 K) and photon energy ($\hbar \omega \geq$ 1.3 meV). The $\sigma(\omega)$ data reveal the entire…
We have measured the electric transport properties of TiN nanostrips with different widths. At zero magnetic field the temperature dependent resistance R(T) saturates at a finite resistance towards low temperatures, which results from…
Atomic contacts made of ferromagnetic metals present zero-bias anomalies in the differential conductance due to the Kondo effect. These systems provide a unique opportunity to perform a statistical analysis of the Kondo parameters in…
Ferromagnetic ordering with a small magnetic moment is found below 14 K from SQUID measurements for the compound Ce4Sb1.5Ge1.5. The transport characteristics of a number of Ce4Sb3-xTx (T = Ge, Si, Sn, Pb, Al) systems were measured at room…
We report measurements of inelastic neutron scattering, magnetic susceptibility, magnetization, and the magnetic field dependence of the specific heat for the heavy Fermion compounds Ce$_3$In and Ce$_3$Sn. The neutron scattering results…
AlN and ZnO, two wide band-gap semiconductors extensively used in the display industry, crystallise in the wurtzite structure, which can favour the formation of epitaxial interfaces to close-packed common ferromagnets. Here we explore these…