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相关论文: Spin-Flip Transistor

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A "spin-flip transistor" is a lateral spin valve consisting of ferromagnetic source drain contacts to a thin-film normal-metal island with an electrically floating ferromagnetic base contact on top. We analyze the \emph{dc}-current-driven…

介观与纳米尺度物理 · 物理学 2009-11-11 Xuhui Wang , Gerrit E. W. Bauer , Axel Hoffmann

The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane,…

介观与纳米尺度物理 · 物理学 2009-11-11 Xuhui Wang , Gerrit E. W. Bauer , Teruo Ono

Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin…

材料科学 · 物理学 2009-11-11 A. Fert , J. -M. George , H. Jaffres , R. Mattana

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…

介观与纳米尺度物理 · 物理学 2008-02-20 Hanan Dery , Lukasz Cywinski , Lu J. Sham

The high efficiency of a tunnel magnetic transistor as a source of spin-polarized electrons has been proven recently [X. Jiang {\it et al.}, Phys. Rev. Lett. {\bf 90}, 256603 (2003)]. A concept of this device based on an active group of hot…

介观与纳米尺度物理 · 物理学 2007-05-23 Emmanuel I. Rashba

Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…

介观与纳米尺度物理 · 物理学 2023-06-28 Franz Eberle , Dieter Schuh , Benedikt Grünewald , Dominique Bougeard , Dieter Weiss , Mariusz Ciorga

A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode,…

介观与纳米尺度物理 · 物理学 2009-11-10 Gerrit E. W. Bauer , Arne Brataas , Yaroslav Tserkovnyak , Bart J. van Wees

We present a theory of magnetotransport through an electronic orbital, where the electron spin interacts with a (sufficiently) large external spin via an exchange interaction. Using a semiclassical approximation, we derive a set of…

介观与纳米尺度物理 · 物理学 2014-10-22 Klemens Mosshammer , Tobias Brandes

A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…

介观与纳米尺度物理 · 物理学 2009-11-10 R. N. Gurzhi , A. N. Kalinenko , A. I. Kopeliovich , A. V. Yanovsky , E. N. Bogachek , Uzi Landman

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…

材料科学 · 物理学 2009-11-13 Biqin Huang , Douwe J. Monsma , Ian Appelbaum

We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin…

介观与纳米尺度物理 · 物理学 2007-09-28 Daniel Urban , Matthias Braun , Jürgen König

The spin and charge transport in materials with spin-dependent conductivity has been studied. It was shown that there is a charge accumulation along spin diffusion in a ferromagnetic metal, which causes a shortening of the spin diffusion…

介观与纳米尺度物理 · 物理学 2020-10-05 Vadym Zayets

The concept of a magnetic bipolar transistor (MBT) is introduced. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin…

凝聚态物理 · 物理学 2007-05-23 Jaroslav Fabian , Igor Zutic , S. Das Sarma

Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…

介观与纳米尺度物理 · 物理学 2009-11-10 J. P. McGuire , C. Ciuti , L. J. Sham

Spin transport via electrons is typically plagued by Joule heating and short decay lengths due to spin-flip scattering. It is known that dissipationless spin currents can arise when using conventional superconducting contacts, yet this has…

介观与纳米尺度物理 · 物理学 2016-04-26 Sol Jacobsen , Iryna Kulagina , Jacob Linder

In magnetic systems with dominating easy-plane anisotropy the magnetization can be described by an effective one dimensional equation for the in-plane angle. Re-deriving this equation in the presence of spin-transfer torques, we obtain a…

材料科学 · 物理学 2009-06-24 Ya. B. Bazaliy

We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the…

材料科学 · 物理学 2008-02-20 L. Cywinski , H. Dery , P. Dalal , L. J. Sham

We present a semiclassical theory of spin-diffusion in a ferromagnetic metal subject to a temperature gradient. Spin-flip scattering can generate pure thermal spin currents by short-circuiting spin channels while suppressing spin…

介观与纳米尺度物理 · 物理学 2015-05-14 Moosa Hatami , Gerrit E. W. Bauer , Saburo Takahashi , Sadamichi Maekawa

We propose a ``spin-guide'' source for generation of electric currents with a high degree of spin polarization, allowing long-distance transmission of the spin-polarization. In the spin-guide scheme proposed here, a non-magnetic conducting…

介观与纳米尺度物理 · 物理学 2007-05-23 R. N. Gurzhi , A. N. Kalinenko , A. I. Kopeliovich , A. V. Yanovsky , E. N. Bogachek , Uzi Landman

The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades.…

介观与纳米尺度物理 · 物理学 2023-06-21 Supriyo Bandyopadhyay
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