相关论文: Metal-insulator transition in anisotropic systems
At low temperature T, a significant difference between the behavior of crystals on the one hand and disordered solids on the other is seen: sufficiently strong disorder can give rise to a transition of the transport properties from…
The three-band Hubbard model is a fundamental model for understanding properties of the Copper-Oxygen planes in cuprate superconductors. We use cutting-edge auxiliary-field quantum Monte Carlo (AFQMC) methods to investigate ground state…
In addition to Anderson and Mott localization, intrinsic phase separation has long been advocated as the third fundamental mechanism controlling the doping-driven metal-insulator transitions. In electronic system, where charge neutrality…
The metal-insulator transition (MIT) is a fundamental phenomenon in condensed matter physics and a hallmark of strong electronic correlations. Hydrogen-based systems offer a simple yet powerful model for investigating the MIT, as their…
Within the framework of tight binding models, aperiodic systems are mapped to a renormalized lattice with a dimer defect. In models exhibiting metal-insulator transition, the dimer acts like a resonant cavity and explains the existence of…
Quantum transport in disordered ferromagnetic (III,Mn)V semiconductors is studied theoretically. Mesoscopic wires exhibit an Anderson disorder-induced metal-insulator transition that can be controlled by a weak external magnetic field. This…
We study electronic transport through a one-dimensional array of sites by using a tight binding Hamiltonian, whose site-energies are drawn from a chaotic sequence. The correlation degree between these energies is controlled by a parameter…
The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…
We study the $\pm J$ three-dimensional Ising model with a spatially uniaxially anisotropic bond randomness on the simple cubic lattice. The $\pm J$ random exchange is applied in the $xy$ planes, whereas in the z direction only a…
We study the magnetotransport in a minimal holographic setup of a metal-insulator transition in two spatial dimensions. Some generic features are obtained without referring to the non-linear details of the holographic theory. The…
The dipole trap model is able to explain the main properties of the apparent metal-to-insulator transition in gated high mobility Si-inversion layers. Our numerical calculations are compared with previous analytical ones and the assumptions…
We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is…
We consider low-temperature behavior of weakly interacting electrons in disordered conductors in the regime when all single-particle eigenstates are localized by the quenched disorder. We prove that in the absence of coupling of the…
In the framework of the tight binding approximation, we study a non-interacting model on the three-component dice lattice with real nearest-neighbor and complex next-nearest-neighbor hopping subjected to $\Lambda$- or V-type sublattice…
We study the metal-insulator transition and magnetic ordering in the Hubbard model using the particle-hole mapping. The analysis simplifies near the ferromagnetic limit. We find that the two dimensional(2D) Hubbard model has a charge…
It is shown, using high-precision numerical simulations, that the mobility edge of the 3d Anderson model depends on the boundary hopping term t in the infinite size limit. The critical exponent is independent of it. The renormalized…
We investigate the probability distribution $p(g)$ of the conductance $g$ in anisotropic two-dimensional systems. The scaling procedure applicable to mapping the conductance distributions of localized anisotropic systems to the…
We study a one-dimensional system that includes both a commensurate off-diagonal modulation of the hopping amplitude and an incommensurate, slowly varying diagonal on-site modulation. By using asymptotic heuristic arguments, we identify…
Metal-insulator transitions driven by disorder (Delta) and/or by electron correlations (U) are investigated within the Anderson-Hubbard model with local binary-alloy disorder using a simple but consistent mean-field approach. The Delta-U…
We study the boundary physics of bulk insulators by considering three coupled Hubbard chains in a linear confining potential. In the Hartree-Fock approximation, the ground state at and slightly off the particle-hole symmetric point remains…