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Amorphous insulating oxides play a significant role in the contemporary electronic industry. Understanding the band alignment of heterogeneous interfaces containing amorphous structures helps to better control the carrier transport property…

材料科学 · 物理学 2017-05-17 Jianqiu Huang , Fei Lin , Celine Hin

Intermediate frequency range (511 - 514 cm-1) Si phonons in Si-SiO2 nanocomposites are shown to have contribution from both core1 and surface/interface1 Si phonons, where, ratio of contribution of the two depends on the size of a Si…

介观与纳米尺度物理 · 物理学 2015-03-13 Ekta Rani , Alka Ingale , A. Chaturvedi , M. P. Joshi , L. M. Kukreja

Topological Weyl semimetals (WSMs) have attracted widespread interests due to the chiral Weyl fermions and surface Fermi arcs that enable unique optical and transport phenomena. In this work, we present angle-resolved Raman spectroscopy of…

The vibrational spectroscopy of semiconductor nanostructures can provide important information on their structure. In this work, experimental Raman and infrared spectra are compared with vibrational spectra of CdSe/CdS core/shell…

The temperature dependence below $T_{c}$ of the lineshape of optical phonons of different symmetry as seen in Raman scattering is investigated for superconductors with anisotropic energy gaps. It is shown that the symmetry of the…

凝聚态物理 · 物理学 2009-10-22 T. P. Devereaux

The band offsets between crystalline and hydrogenated amorphous silicon (a-Si:H) are key parameters governing the charge transport in modern silicon hetrojunction solar cells. They are an important input for macroscopic simulators that are…

材料科学 · 物理学 2017-08-02 K. Jarolimek , E. Hazrati , R. A. de Groot , G. A. de Wijs

By performing density functional theory-based ab-initio calculations, Raman active phonon modes of novel single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding…

介观与纳米尺度物理 · 物理学 2018-04-04 M. Yagmurcukardes , C. Bacaksiz , E. Unsal , B. Akbali , R. T. Senger , H. Sahin

The range of stimulated Raman scattering (SRS) frequencies covers a domain which at the low end abuts half the laser frequency, omega_0 / 2, according to the simplest SRS theories, corresponding to scatter from electron densities near 1/4…

等离子体物理 · 物理学 2015-05-20 Harvey A. Rose , Philippe Mounaix

The dependence of surface-enhanced Raman scattering (SERS) spectra on the precise axial position of the laser focus relative to a solid nanostructured substrate has received little to no attention in the literature. Here we show this…

光学 · 物理学 2026-03-31 Fran Nekvapil , Cosmin Farcău

Effects of nonlinearity in Thomson scattering of a high intensity laser pulse from electrons are analyzed. Analytic expressions for laser pulse shaping in amplitude and frequency are obtained which control spectrum broadening for…

等离子体物理 · 物理学 2014-12-09 S. G. Rykovanov , C. G. R. Geddes , C. B. Schroeder , E. Esarey , W. P. Leemans

An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The…

介观与纳米尺度物理 · 物理学 2024-09-17 Priyesh Kumar , Sudip Kumar Deb , Subhananda Chakrabarti , Jhuma Saha

A large-scale spanwise and wall-normal array of sonic anemometers in the atmospheric surface layer is used to acquire all three components of instantaneous fluctuating velocity as well as temperature in a range of stability conditions.…

流体动力学 · 物理学 2022-06-08 Xuebo Li , Nicholas Hutchins , Xiaojing Zheng , Ivan Marusic , Woutijn J. Baars

The structural origin of the first sharp diffraction peak (FSDP) in amorphous silica is studied by analyzing chemical and radial ordering of silicon (Si) and oxygen (O) atoms in binary amorphous networks. The study shows that the chemical…

无序系统与神经网络 · 物理学 2024-03-26 Parthapratim Biswas , Devilal Dahal , Stephen R. Elliott

Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence…

The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface…

One of the long-standing puzzles observed in many laser-plasma experiments is the gap in the Raman backscattering spectrum. This gap is characterized by the absence of backscattered light between some critical wavelength and twice the…

等离子体物理 · 物理学 2023-09-20 Ido Barth , Pierre Michel

Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically…

We report on an inelastic (Raman) light scattering study of the local structure of amorphous GeTe films. A detailed analysis of the temperature-reduced Raman spectra has shown that appreciable structural changes occur as a function of…

A kind of asymmetric transmission (AT) device based on bilayer silicon arrays (BSA) nanostructure is theoretically explored, which achieves high forward transmissivity and suppressed backward transmissivity for broadband by simply adjusting…

光学 · 物理学 2026-01-27 Ruihan Ma , Yuqing Cheng , Mengtao Sun

Cubic boron phosphide BP has been studied in situ by X-ray diffraction and Raman scattering up to 55 GPa at 300 K in a diamond anvil cell. The bulk modulus of B0 = 174(2) GPa has been established, which is in excellent agreement with our ab…