相关论文: Carrier Scattering in Quantum Nanosystems

The large scale various shapes and orientation defects influence into carrier scattering was theoretically analyzed using Monte Carlo method and compared to the experimental measurements. It was shown how the large scale defects screen…

A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to…

We study theoretically the entanglement created in a scattering between an electron, incoming from a source lead, and another electron bound in the ground state of a quantum dot, connected to two leads. We analyze the role played by the…

The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of…

Analysis of an exactly soluble model of phonons coupled to a carrier in a quantum dot provides a clear illustration of a phonon bottleneck to relaxation. The introduction of three-phonon interactions leads to a broad window for relaxation…

The first global quantum simulation of semiconductor-based quantum-cascade lasers is presented. Our three-dimensional approach allows to study in a purely microscopic way the current-voltage characteristics of state-of-the-art unipolar…

This Chapter contains a review of the recent results, both experimental and theoretical, related to optical control of carriers confined in semiconductor quantum dots. The physics of Rabi oscillations of exciton and biexciton occupations,…

While time-dependent perturbation theory shows inefficient carrier-phonon scattering in semiconductor quantum dots, we demonstrate that a quantum kinetic description of carrier-phonon interaction predicts fast carrier capture and…

We have investigated the main scattering mechanisms affecting mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects,…

We investigate the transport through a quantum ring, a dot and a barrier embedded in a nanowire in a homogeneous perpendicular magnetic field. To be able to treat scattering potentials of finite extent in magnetic field we use a mixed…

We performed studies of coherent electronic transport through a single walled carbon nanotube. In the calculations multiple scattering on the contacts and interference processes were taken into account. Conductance is a composition of…

A microscopic theory is used to study the optical properties of semiconductor quantum dots. The dephasing of a coherent excitation and line-shifts of the interband transitions due to carrier-carrier Coulomb interaction and carrier-phonon…

The first global simulation of semiconductor-based quantum-cascade lasers is presented; Our fully three-dimensional approach allows to study in a purely microscopic way -without resorting to phenomenological parameters- the current-voltage…

The optical resonances supported by nanostructures offer the possibility to enhance the interaction between matter and the quantum states of light. In this work, we provide a framework to study the scattering of quantum states of light with…

We propose a mechanism of energy relaxation for carriers confined in a non-polar quantum dot surrounded by an amorphous polar environment. The carrier transitions are due to their interaction with the oscillating electric field induced by…

We propose the use of quantum dots formed in a semiconductor nanocolumn for the realization of charge or spin based quantum bits. The radial carrier confinement is achieved by employing conformal overgrowth, while multiple segmented gates…

Transport through semiconductor nanostructures is a quantum-coherent process. This paper focuses on systems in which the electron's dynamics is ballistic and the transport is dominated by the scattering from structure boundaries. Opposite…

Scattering of carriers with ionized impurities governs charge transport in doped semiconductors. However, electron interactions with ionized impurities cannot be fully described with quantitative first-principles calculations, so their…

The dielectric environment of thin semiconductor nanowires can affect the charge transport properties inside the wire. In this work, it is shown that Coulomb impurity scattering inside thin nanowires can be damped strongly by coating the…

The effects of carrier-impurity correlations due to a Kondo-like spin-spin interaction in diluted magnetic semiconductors are investigated. These correlations are not only responsible for a transfer of spins between the carriers and the…