相关论文: Quantum Confinement Effects in Semiconductor Clust…

The shifts of the electronic absorption spectra of GaAs and GaP semiconductor clusters are calculated using accurate pseudopotentials. In the absence of experimental data at present, these calculations provide estimates of expected spectral…

Based on the observed absorption spectral band shifts, the growth process of the semiconductor clusters was divided into two phenomenological regimes: The "molecular regime" that is associated with the band blue shift as the size of cluster…

The effect of quantum confinement in the optical absorption spectra of atomically thin {\alpha}-In2Se3 crystals is studied, observing a huge thickness-dependent shift in the optical band gap of exfoliated {\alpha}-In2Se3 flakes. The band…

We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4x4 Luttinger description of the valence band, we have calculated…

The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their…

Elucidating the underlying principles behind band gap engineering is paramount for the successful implementation of semiconductors in photonic and optoelectronic devices. Recently it has been shown that the band gap of a wide and direct…

Atomic effective pseudopotentials enable atomistic calculations at the level of accuracy of density functional theory for semiconductor nanostructures with up to fifty thousand atoms. Since they are directly derived from ab-initio…

While non-nitride III-V semiconductors typically have a zincblende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures…

The proximity effect in semiconductor-superconductor nanowires is expected to generate an induced gap in the semiconductor. The magnitude of this induced gap, together with the semiconductor properties like the spin-orbit coupling and…

A novel picture of the quasiparticle (QP) gap in prototype semiconductors Si and Ge emerges from an analysis based on all-electron, self-consistent, GW calculations. The deep-core electrons are shown to play a key role via the exchange…

We report on a theoretical study of the electronic structures of the [111]-oriented, free-standing, zincblende InAs and InP nanowires with hexagonal cross sections by means of an atomistic $sp^{3}s^{*} $, spin-orbit interaction included,…

We present an experimental and theoretical study of the conduction states of crystalline Si films confined within amorphous SiO_2 barriers, using the Si-2p core-level excitations. The spectral peaks near the conduction band minimum are…

Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current…

We have proposed and validated an ansatz as effective potential for confining electron/hole within spherical quantum dot in order to understand quantum confinement and its consequences associated with energy states and band gap of Spherical…

We study the effect of semicore states on the self-energy corrections and electronic energy gaps of silicon, germanium and GaAs. Self-energy effects are computed within the GW approach, and electronic states are expanded in a plane-wave…

The energy levels and optical transitions of tetrahedral core/shell InP/ZnSe quantum dots (QDs) are investigated by means of multi-band k$\cdot$p theory. Despite the $\overline{T}_d$ symmetry relaxing spherical selection rules, the…

Materials with van der Waals-bonding are known to exhibit quantum confinement effect, in which the electronic bandgap of the three-dimensional (3D) realization of a material is lower than that of its two-dimensional (2D) counterpart.…

Recently, there has been tremendous research interest in novel bismide semiconductor materials (such as GaBi$_x$As$_{1-x}$) for wavelength-engineered, low-loss optoelectronic devices. We report a first study of the quantum confined Stark…

We look at the relationship between the preparation method of Si and Ge nanostructures (NSs) and the structural, electronic, and optical properties in terms of quantum confinement (QC). QC in NSs causes a blue shift of the gap energy with…

We present a symmetry-based calculation of the electronic structure of a compound semiconductor quantum dot (QD) in the sp^3s* tight-binding model including the spin-orbit interaction. The Hamiltonian matrix is diagonalized exactly for CdTe…