相关论文: Quantum Confinement Effects in Semiconductor Clust…
Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of wurtzite crystal phase. Despite the reports in literature of ab initio band structures for these…
We have performed electronic structure calculations to explore the band-gap dependence on polytypes for $sp^3$-bonded semiconducting materials, i.e., SiC, AlN, BN, GaN, Si, and diamond. In this comprehensive study, we have found that…
Gap structure in noncentrosymmetric superconductors with spin-orbit band splitting is studied using a microscopic model of pairing mediated by phonons and/or spin fluctuations. The general form of pairing interaction in the band…
We study a 2D mesoscopic ring with an anisotropic effective mass considering surface quantum confinement effects. Consider that the ring is defined on the surface of a cone, which can be controlled topologically and mapped to the 2D ring in…
Based on first-principles calculations, we predict that the monolayer AuTe2Cl is a quantum spin Hall (QSH) insulator with a topological band gap about 10 meV. The three-dimensional (3D) AuTe2Cl is a topological semimetal that can be viewed…
Recent advances in growth techniques have allowed the fabrication of semiconductor nanostructures with mixed wurtzite/zinc-blende crystal phases. Although the optical characterization of these polytypic structures is well eported in the…
We present a direct computation of the period integrals on degenerate Seiberg-Witten curves for supersymmetric QCD, and show how these periods determine the changes in the quantum numbers of the states, when passing from the weak to the…
We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other. Calculations were done for three different geometries, quantum…
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…
Using a single-band model, the lowest transition energy was analysed between the lowest unoccupied molecular orbital (LUMO) of the conduction band and the highest occupied molecular orbital (HOMO) of the valence band. We focus on…
Alternate contraction and drastic expansion, i.e., `breathing' of electronic subshells, the effects of fusion of two subshells into one subshell and its subsequent fission (splitting) into the original subshells, as well as multiple…
We employ first-principles techniques tailored to properly describe semiconductors (modified Becke-Johnson potential added to the exchange-correlation functional), to obtain the electronic band structures of both the zinc-blende and…
We calculate the Overhauser frequency shifts in semiconductor nanostructures resulting from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins. The frequency shifts depend on the electronic local density of…
The observations of quantum oscillations in overdoped cuprate superconductors were in agreement with a charge density contained in a cylindrical Fermi surface but the frequencies of lightly doped compounds were much smaller than expected.…
Local composition fluctuations in random alloys become crucial when one or more dimensions are reduced to the nanoscale. Using extended H\"uckel theory, we study the semiconductor random alloy SiGe sandwiched between Si due to its relevance…
The wurtzite (wz) structure of CdS is analyzed using density functional theory within the generalized gradient approximation (GGA) and Hubbard correction (GGA+U). The total energy convergence evaluation is carried out concerning energy…
A multiscale approach was adopted for the calculation of confined states in self-assembled semiconductor quantum dots (QDs). While results close to experimental data have been obtained with a combination of atomistic strain and…
We obtain an effective parametrization of the bulk electronic structure of InP within the Tight Binding scheme. Using these parameters, we calculate the electronic structure of InP clusters with the size ranging upto 7.5 nm. The calculated…
Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in…
In the recent work of Ref.\cite{Vlaic2017-bs}, it has been shown that Pb nanocrystals grown on the electron accumulation layer at the (110) surface of InAs are in the regime of Coulomb blockade. This enabled the first scanning tunneling…