相关论文: Reconfigurable Multistate MRAM Synapses with Vorte…

The figures-of-merit for reservoir computing (RC), using spintronics devices called magnetic tunnel junctions (MTJs), are evaluated. RC is a type of recurrent neural network. The input information is stored in certain parts of the…

We develop a unified platform to evaluate Ideal, Linear, and Non-linear $\text{Pr}_{0.7}\text{Ca}_{0.3}\text{MnO}_{3}$ memristor-based synapse models, each getting progressively closer to hardware realism, alongside four STDP learning rules…

The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…

Recent years have witnessed growing interest in the use of Artificial Neural Networks (ANNs) for vision, classification, and inference problems. An artificial neuron sums N weighted inputs and passes the result through a non-linear transfer…

We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…

We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…

Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising emerging non-volatile memory (NVM) technology with wide applications. However, the data recovery of STT-MRAM is affected by the diversity of channel raw bit error…

Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of…

We design a neural network based on a single spin-torque vortex nano-oscillator (STVO) multiplexed in time. The behavior of the STVO is simulated with an improved ultra-fast and quantitative model based on the Thiele equation approach.…

Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…

Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…

Spin torque nano-oscillators (STNOs) hold encouraging promise for nanoscale microwave generators, modulators, and new types of intelligent computing. The nonlinearity, describing the current-induced tunability of oscillating frequency, is a…

In this work, we experimentally demonstrate two key building blocks for realizing Binary/Ternary Neural Networks (BNNs/TNNs): (i) 130 nm CMOS based sigmoidal neurons and (ii) HfOx based multi-level (MLC) OxRAM-synaptic blocks. An optimized…

A new spintronic nonvolatile memory cell analogous to 1T DRAM with non-destructive read is proposed. The cells can be used as neural computing units. A dual-circuit neural network architecture is proposed to leverage these devices against…

Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…

Non-volatile memory (NVM) technologies such as spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque magnetic random access memory (SOT-MRAM) have significant advantages compared to conventional SRAM due to…

We have designed, fabricated, and successfully tested a prototype mixed-signal, 28x28-binary-input, 10-output, 3-layer neuromorphic network ("MLP perceptron"). It is based on embedded nonvolatile floating-gate cell arrays redesigned from a…

Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…

Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two…