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Rhombohedral multilayer graphene has recently emerged as a rich platform for studying correlation driven magnetic, topological and superconducting states. While most experimental efforts have focused on devices with N$\leq 9$ layers, the…

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic…

Multilayer graphene systems with a rhombohedral stacking order harbor nearly flat bands in their single-particle spectrum. We propose ansatz states to describe the surface-localized states of flat band electrons. The absence of kinetic…

强关联电子 · 物理学 2013-04-10 Hao Wang , Jin-Hua Gao , Fu-Chun Zhang

Topologically protected flat surface bands make thin films of rhombohedral graphite an appealing platform for searching for strongly correlated states of 2D electrons. In this work, we study rhombohedral graphite with a twin boundary…

介观与纳米尺度物理 · 物理学 2023-05-29 Aitor Garcia-Ruiz , Sergey Slizovskiy , Vladimir I. Fal'ko

In crystalline solids the interactions of charge and spin can result in a variety of emergent quantum ground states, especially in partially filled, topological flat bands such as Landau levels or in 'magic-angle' bilayer graphene. Much…

The topological electronic structure of crystalline materials often gives rise to intriguing surface states, such as Dirac surface states in topological insulators, Fermi arc surface states in Dirac semimetals, and topological…

介观与纳米尺度物理 · 物理学 2024-03-26 Wenqiang Zhou , Jing Ding , Jiannan Hua , Le Zhang , Kenji Watanabe , Takashi Taniguchi , Wei Zhu , Shuigang Xu

Rhombohedral stacked multilayer graphene is an ideal platform to search for correlated electron phenomena, due to its pair of flat bands touching at zero energy and further tunability by an electric field. Furthermore, its valley-dependent…

介观与纳米尺度物理 · 物理学 2024-02-29 Tonghang Han , Zhengguang Lu , Giovanni Scuri , Jiho Sung , Jue Wang , Tianyi Han , Kenji Watanabe , Takashi Taniguchi , Hongkun Park , Long Ju

Flat bands result in a divergent density of states and high sensitivity to interactions in physical systems. While such bands are well known in systems under magnetic fields, their realization and behavior in zero-field settings remain…

强关联电子 · 物理学 2025-08-05 Chen-Xin Jiang , Zi-Xiang Hu , Bo Yang

Flat bands and nontrivial topological physics are two important topics of condensed matter physics. With a unique stacking configuration analogous to the Su-Schrieffer-Heeger (SSH) model, rhombohedral graphite (RG) is a potential candidate…

We study the mean-field broken symmetry phases of charge neutral multilayer rhombohedral graphene within tight-binding approximations including self-consistent extended Hubbard interactions. We used on-site and inter-site Hubbard…

介观与纳米尺度物理 · 物理学 2025-09-29 Dongkyu Lee , Wooil Yang , Young-Woo Son , Jeil Jung

Flat bands in graphitic materials emerged as a platform for realizing tunable correlated physics. As a nodal-line semimetal, rhombohedral graphite features flat drumhead surface states in the vicinity of the Dirac points, which carry a…

介观与纳米尺度物理 · 物理学 2025-12-24 Xiaoqian Liu , Yifei Guan , Oleg V. Yazyev

Graphene multilayers exhibit electronic spectra that depend sensitively on both the number of layers and their stacking order. Beyond trilayer graphene, mixed stacking sequences (alternating Bernal and rhombohedral layers) give rise to…

Superconductivity in single-layer graphene has attracted considerable interest. Here, using the determinant quantum Monte Carlo method, we study transitions of superconductivity and magnetism in a monolayer graphene with a special periodic…

强关联电子 · 物理学 2024-12-31 Jingyao Meng , Runyu Ma , Tianxing Ma , Hai-Qing Lin

In rhombohedral-stacked few-layer graphene, the very flat energy bands near the charge neutrality point are unstable to electronic interactions, giving rise to states with spontaneous broken symmetries. Using transport measurements on…

介观与纳米尺度物理 · 物理学 2018-03-09 K. Myhro , S. Che , Y. Shi , Y. Lee , K. Thilahar , K. Bleich , Dmitry Smirnov , C. N. Lau

Interacting electrons in flat bands give rise to a variety of quantum phases. One fundamental aspect of such states is the ordering of the various flavours - such as spin or valley - that the electrons can undergo and the excitation…

介观与纳米尺度物理 · 物理学 2023-05-17 Gelareh Farahi , Cheng-Li Chiu , Xiaomeng Liu , Zlatko Papic , Kenji Watanabe , Takashi Taniguchi , Michael P. Zaletel , Ali Yazdani

Certain lattice wave systems in translationally invariant settings have one or more spectral bands that are strictly flat or independent of momentum in the tight binding approximation, arising from either internal symmetries or fine-tuned…

介观与纳米尺度物理 · 物理学 2018-06-07 Daniel Leykam , Alexei Andreanov , Sergej Flach

Two-dimensional systems with flat bands support correlated phases such as superconductivity and charge fractionalization. While twisted moire systems like twisted bilayer graphene have revealed such states, they remain complex to control.…

介观与纳米尺度物理 · 物理学 2025-07-02 Elias Andrade , Alejandro Jimeno-Pozo , Pierre A. Pantaleon , Francisco Guinea , Gerardo G. Naumis

Stacking geometry in multilayer graphene (MLG) provides an interesting degree of freedom to engineer its electronic structure near the Fermi level, wherein the linear bands in single layer graphene could retain or evolve into parabolic or…

介观与纳米尺度物理 · 物理学 2026-05-28 Fred Sun , Jia-An Yan

Two-dimensional atomic crystals can radically change their properties in response to external influences such as substrate orientation or strain, resulting in essentially new materials in terms of the electronic structure. A striking…

Rhombohedral multilayer graphene has emerged as an extraordinary platform for investigating exotic quantum states, such as superconductivity and fractional quantum anomalous Hall effects, mainly due to the existence of topological surface…

介观与纳米尺度物理 · 物理学 2025-03-18 H. B. Xiao , C. Chen , X. Sui , S. H. Zhang , M. Z. Sun , H. Gao , Q. Jiang , Q. Li , L. X. Yang , M. Ye , F. Y. Zhu , M. X. Wang , J. P. Liu , Z. B. Zhang , Z. J. Wang , Y. L. Chen , K. H. Liu , Z. K. Liu
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