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Copper-doped zinc sulphide (ZnS:Cu) thin films were synthesized through pulsed laser ablation in an inert background gas on stationary and rotating substrates, and a comprehensive opto-electrical characterisation is presented. The…

Ternary Zintl phosphides are promising light-absorbing semiconductors for thin-film optoelectronic applications, but strategies for controlling their microstructure and optoelectronic quality remain underexplored. Here, we report the…

We present the intrinsic optical properties over a broad spectral range of TiN thin films deposited on a Si/SiO$_2$ substrate. We analyze the measured reflectivity spectra of the film-substrate multilayer structure within a well-establish…

材料科学 · 物理学 2015-05-13 F. Pfuner , L. Degiorgi , T. I. Baturina , V. M. Vinokur , M. R. Baklanov

We report on the successful synthesis of highly conductive PdCoO2 ultrathin films on Al2O3 (0001) by pulsed laser deposition. The thin films grow along the c-axis of the layered delafossite structure of PdCoO2, corresponding to the…

强关联电子 · 物理学 2018-04-24 T. Harada , K. Fujiwara , A. Tsukazaki

Metal oxide thin films are of great interest in scientific advancement, particularly semiconductor thin films in transistors and in a wide range of optoelectronic applications. Many metal oxide thin films attract interest for their…

应用物理 · 物理学 2024-11-21 Darragh Buckley , Alex Lonergan , Colm O'Dwyer

Zinc nitride films were synthesized by reactive radio frequency (rf) magnetron sputtering of a zinc target using an Ar+N2 mixture. The as-deposited films were annealed in the air and O2 at 300 {\deg}C for 1 hr. The XRD measurements…

材料科学 · 物理学 2023-01-18 Ting Wen , Ahalapitiya H Jayatissa

We theoretically investigate Sn(II) phosphates as optoelectronic materials using first principles calculations. We focus on known prototype materials Sn$_n$P$_2$O$_{5+n}$ (n=2, 3, 4, 5) and a previously unreported compound, SnP$_2$O$_6$…

材料科学 · 物理学 2016-12-06 Qiaoling Xu , Yuwei Li , Lijun Zhang , Weitao Zheng , David J. Singh , Yanming Ma

Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and…

Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV…

Tin Sulphide is a layered compound which retains its structure when deposited as thin films by thermal evaporation. The films were found to have oriented growth with the direction of orientation changing with film thickness. The film's…

材料科学 · 物理学 2016-04-20 Yashika Gupta , P. Arun

The terahertz (THz) properties of ZrN thin films grown with CMOS-techniques on industry-standard 300 mm silicon wafers are investigated in order to explore their superconducting behavior. The films have thicknesses ranging from 18 to 48 nm,…

Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated…

Novel low index (n less than 1.3)/high light trapping cladding films consisting of nanoporous alumina (sapphire), as formed by controlled anodization of aluminum, are described. These films are mechanically hard, intrinsically very…

仪器与探测器 · 物理学 2013-08-05 C. Sanzeni , G. Jennings , D. R. Winn

Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics.…

Thin-film photovoltaics offers a path to significantly decarbonize our energy production. Unfortunately, current materials commercialized or under development as thin-film solar cell absorbers are far from optimal as they show either low…

The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell paired with a narrower-gap bottom cell. An outstanding…

We deposit thin titanium-nitride (TiN) and TiN/Ti/TiN multilayer films on sapphire substrates and measure the reflectance and transmittance in the wavelength range from 400 nm to 2000 nm using a spectrophotometer. The optical constants…

光学 · 物理学 2019-01-30 M. Dai , W. Guo , X. Liu , M. Zhang , Y. Wang , L. F. Wei , G. C. Hilton , J. Hubmayr , J. Ullom , J. Gao , M. R. Vissers

Transition metal nitrides are a fascinating class of hard coating material that provide an excellent platform for investigating superconductivity and fundamental electron phonon interactions. In this work the structural morphological and…

We report the first study of the optical conductivity of MgB2 covering the range of its superconducting energy gap. Terahertz time-domain spectroscopy is utilized to determine the complex, frequency-dependent conductivity of thin films. The…

Flexible and transparent electronics presents a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc.Zinc oxide…

介观与纳米尺度物理 · 物理学 2017-02-21 Zhang Yong-Hui , Mei Zeng-Xia , Liang Hui-Li , Du Xiao-Long
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