ZrN 薄膜的 THz 电动力学与超导能尺度
摘要
investigated the terahertz (THz) properties of ZrN thin films grown with CMOS-techniques on industry-standard 300 mm silicon wafers in order to explore their superconducting behavior. The films have thicknesses ranging from 18 to 48 nm, and their critical temperatures Tc are between 5 and 7.3 K. We probe the real and imaginary parts of the complex dynamical conductivity sigma in the frequency range from 100 - 540 GHz (0.4 - 2.2 meV) and as a function of temperature. The experiments provide direct access to the low-energy electrodynamics and key materials parameters such as superconducting energy gap and superfluid density. Our findings indicate that ZrN is a weakly coupled BCS-type superconductor with a gap-to-Tc ratio of approximately 3.4 in the thick film limit. For thinner films, this coupling ratio increases up to 4.0, departing from the BCS prediction. The results establish large-scale ZrN thin films as promising material for high-frequency superconducting applications.
引用
@article{arxiv.2509.17272,
title = {THz electrodynamics and superconducting energy scales of ZrN thin films},
author = {Ozan Saritas and Frederik Bolle and Yayi Lin and Martin Dressel and Roman Potjan and Marcus Wislicenus and Andre Reck and Marc Scheffler},
journal= {arXiv preprint arXiv:2509.17272},
year = {2025}
}
备注
7 pages, 5 figures