相关论文: Space-Charge Effects in Silicon Reconfigurable Non…
In complex transition metal oxide heterostructures of physically dissimilar perovskite compounds, interface phenomena can lead to novel physical properties not observed in either of their constituents. This remarkable feature opens new…
Space charge effects can significantly degrade charge collection in organic photovoltaics (OPVs), especially in thick-film devices. The two main causes of space charge are doping and imbalanced transport. Although these are completely…
We extend entropy production to a deeply quantum regime involving noncommuting conserved quantities. Consider a unitary transporting conserved quantities ("charges") between two systems initialized in thermal states. Three common formulae…
The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is…
Nonlinear charge transport in strongly coupled semiconductor superlattices is described by Wigner-Poisson kinetic equations involving one or two minibands. Electron-electron collisions are treated within the Hartree approximation whereas…
We report on a theoretical study of quantum charge transport in atomistic models of silicon nanowires with surface roughness-based disorder. Depending on the nanowires features (length, roughness profile) various conduction regimes are…
We present a dynamical study on the nonlinear conduction behaviour in the commensurate charge-density-wave phase of the quasi-one-dimensional conductor DCNQI$_2$Cu below 75 K. We can accurately simulate magnitude and time-dependence of the…
Charge transfer plasmon (CTP) modes arise when metallic nanoparticles are connected by a conductive junction. These ultatunable plasmonic modes can be actively tuned and broadly modulated from visible to IR regimes, implying their…
The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on…
The electric resistivity is examined in the constrained Hilbert space of a doped Mott insulator, which is dictated by a non-Ioffe-Larkin composition rule due to the underlying mutual Chern-Simons topological gauge structure. In the…
For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG)…
Quantum simulators have recently enabled experimental observations of quantum many-body systems' internal thermalization. Often, the global energy and particle number are conserved, and the system is prepared with a well-defined particle…
The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged…
A large number of non-adiabatic dynamical studies have been applied to reveal the nature of carrier transport in organic semiconductors with different approximations. We present here a "nearly exact" graphical process unit (GPU) based…
The rapid development of modern energy applications drives an urgent need to enhance the dielectric strength of energy storage dielectrics for higher power density. Interface design is a promising strategy to regulate the crucial charge…
Present-days Reversed Field Pinches (RFPs) are characterized by quasi-laminar magnetic configurations in their core, whose boundaries feature sharp internal transport barriers, in analogy with tokamaks and stellarators. The abatement of…
We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping. Oxygen impurities in Si act as donors…
Silicon exhibits several metastable allotropes which recently attracted attention in the quest for materials with superior (e.g. optical) properties, compatible with Si technology. In this work we shed light on the atomic-scale mechanisms…
We study charge and spin transport through an interacting quantum wire, caused by backscattering off an effective impurity potential with a periodic time-dependence. The adiabatic regime of this pump for charge and spin is shown to depend…
Dielectric constant and absorption measurements on boron doped silicon samples show that transitions between the acceptor energy levels can be induced by an applied resonant ac electric field and the Stark tuning of level spacing with an…