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Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple…

Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies,…

介观与纳米尺度物理 · 物理学 2024-04-09 Lifu Zhang , Ruihao Ni , Liuxin Gu , Ming Xie , Suji Park , Houk Jang , Takashi Taniguchi , Kenji Watanabe , You Zhou

Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay channels governs emission efficiency. Existing approaches,…

The strong light-matter interaction in monolayer transition metal dichalcogenides (TMDs) is promising for nanoscale optoelectronics with their direct band gap nature and the ultra-fast radiative decay of the strongly bound excitons these…

Multilayer MoS2 possesses highly anisotropic thermal conductivities along in-plane and cross-plane directions that could hamper heat dissipation in electronics. With about 9% cross-plane compressive strain created by hydrostatic pressure in…

For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this…

Exciton transport is fundamental for understanding transport phenomena in bosonic systems and for exploring excitation energy transfer in materials. Spatially indirect excitons (IXs) are composed of electrons and holes in separated layers.…

介观与纳米尺度物理 · 物理学 2025-09-16 Zhiwen Zhou , W. J. Brunner , E. A. Szwed , H. Henstridge , L. H. Fowler-Gerace , L. V. Butov

Despite showing great promise for optoelectronics, the commercialization of halide perovskite nanostructure-based devices is hampered by inefficient electrical excitation and strong exciton binding energies. While transport of excitons in…

介观与纳米尺度物理 · 物理学 2020-10-29 Andreas Singldinger , Moritz Gramlich , Christoph Gruber , Carola Lampe , Alexander S. Urban

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in…

介观与纳米尺度物理 · 物理学 2020-02-27 E. V. Calman , L. H. Fowler-Gerace , L. V. Butov , D. E. Nikonov , I. A. Young , S. Hu , A. Mischenko , A. K. Geim

Ensembles of indirect or interlayer excitons (IXs) are intriguing systems to explore classical and quantum phases of interacting bosonic ensembles. IXs are composite bosons that feature enlarged lifetimes due to the reduced overlap of the…

The anisotropy of the electronic transition is an important physical property not only determining the materials' optical property, but also revealing the underlying character of the electronic states involved. Here we used…

材料科学 · 物理学 2016-03-09 Jinhua Hong , Kun Li , Chuanhong Jin , Xixiang Zhang , Ze Zhang , Jun Yuan

Charge transfer in type-II heterostructures plays important roles in determining device performance for photovoltaic and photocatalytic applications. However, current theoretical studies of charge transfer process don't consider the effects…

材料科学 · 物理学 2023-08-09 Zhi-Guo Tao , Guo-Jun Zhu , Weibin Chu , Xin-Gao Gong , Ji-Hui Yang

Novel excitonic phenomena emerging in transition metal dichalcogenide (TMDC) heterostructures belong to the most exciting topics in contemporary physics of van der Waals materials. Interlayer excitons (IXs) stand out among those due to…

Semiconductor heterostructures provide a powerful platform for the engineering of excitons. Here we report the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or…

Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an…

Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence…

Weyl semimetal (WSM) states can be achieved by breaking spatial-inversion symmetry or time reversal symmetry. However, the anisotropy of the energy reduction contributing to the emergence of WSM states has seldom been investigated by…

MoSe2-WSe2 heterostructures host strongly bound interlayer excitons (IXs) which exhibit bright photoluminescence (PL) when the twist-angle is near 0{\deg} or 60{\deg}. Over the past several years, there have been numerous reports on the…

We investigate the interaction between interlayer excitons and ferroelectric domains in hBN-encapsulated 3R-MoS$_2$/MoSe$_2$ heterostructures, combining photoluminescence experiments with density functional theory and many-body Green's…

An emerging class of semiconductor heterostructures involves stacking discrete monolayers such as the transition metal dichalcogenides (TMDs) to form van der Waals heterostructures. In these structures, it is possible to create interlayer…

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