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The internal structure of doped holes in the Mott insulator may provide important insight into the physics of doped cuprates. Its observability via a single-particle probe by scanning tunneling spectroscopy (STS) and angle-resolved…

强关联电子 · 物理学 2024-08-27 Jing-Yu Zhao , Zheng-Yu Weng

Modeling the underlying pairing mechanism of charge carriers in strongly correlated electrons, starting from a microscopic theory, is among the central challenges of condensed-matter physics. Hereby, the key task is to understand what…

强关联电子 · 物理学 2024-03-21 Lukas Homeier , Pit Bermes , Fabian Grusdt

We study the spectral function of two-leg Hubbard ladders with the time-dependent density matrix renormalization group method (tDMRG). The high-resolution spectrum displays features of spin-charge separation and a scattering continuum of…

强关联电子 · 物理学 2019-06-19 Chun Yang , Adrian E. Feiguin

We study the single hole tt't''J-model numerically to address the momentum space anisotropy found in doped Mott insulators. A simple two band picture to understand how the doped hole is screened by the spin background in states of different…

强关联电子 · 物理学 2007-05-23 Tiago C. Ribeiro

We study electronic structure of hole- and electron-doped Mott insulators in the two-dimensional Hubbard model to reach a unified picture for the normal state of cuprate high-Tc superconductors. By using a cluster extension of the dynamical…

强关联电子 · 物理学 2010-10-20 Shiro Sakai , Yukitoshi Motome , Masatoshi Imada

We show here that many of the normal state properties of the cuprates can result from the new charge 2e bosonic field which we have recently (Phys. Rev. Lett. {\bf 99}, 46404 (2007) and Phys. Rev. B 77, 014512 (2008)) shown to exist in the…

强关联电子 · 物理学 2009-11-13 Ting-Pong Choy , Robert G. Leigh , Philip Phillips

We investigate the spectral properties of the doped ${t-t'}$ Hubbard model with parameters typical for high-temperature cuprate superconductors. Our approach is based on a novel strong-coupling Green's function expansion around a reference…

强关联电子 · 物理学 2026-05-15 E. A. Stepanov , S. Iskakov , M. I. Katsnelson , A. I. Lichtenstein

With high-Tc cuprates in mind, properties of correlated dx2-y2-wave superconducting (SC) and antiferromagnetic (AF) states are studied for the Hubbard (t-t'-U) model on square lattices, using a variational Monte Carlo method. We employ…

超导电性 · 物理学 2012-12-14 Hisatoshi Yokoyama , Masao Ogata , Yukio Tanaka , Kenji Kobayashi , Hiroki Tsuchiura

We investigate the resonant two-magnon Raman scattering in two-dimensional (2D) Mott insulators by using a half-filled 2D Hubbard model in the strong coupling limit. By performing numerical diagonalization calculations for small clusters,…

强关联电子 · 物理学 2007-05-23 T. Tohyama , H. Onodera , K. Tsutsui , S. Maekawa

We propose a theory of two-magnon {\it resonant\/} Raman scattering from antiferromagnetic insulators, which contains information both on the magnetism and the carrier properties in the lighly doped phases. We argue that the conventional…

凝聚态物理 · 物理学 2009-10-22 Andrey V. Chubukov , David M. Frenkel

Symmetry of photoexcited states with two photoinduced carriers in two-dimensional Mott insulators is examined by applying the numerically exact diagonalization method to finite-size clusters of a half-filled Hubbard model in the…

强关联电子 · 物理学 2007-05-23 T. Tohyama

Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled…

高能物理 - 理论 · 物理学 2018-08-03 Tomas Andrade , Alexander Krikun , Koenraad Schalm , Jan Zaanen

The dual-fermion approach offers a way to perform diagrammatic expansion around the dynamical mean-field theory. Using this formalism, the influence of antiferromagnetic fluctuations on the self-energy is taken into account through…

强关联电子 · 物理学 2014-12-22 Junya Otsuki , Hartmut Hafermann , Alexander I. Lichtenstein

The kinetic features of holes (electrons) in the Hubbard model are studied using a variational Monte Carlo method. In doped Mott insulators (U>U_co), holes are classified, in the sense of conduction, into two categories: (i) The holes…

强关联电子 · 物理学 2012-11-28 H. Yokoyama , S. Tamura , K. Kobayashi , M. Ogata

The single-particle spectral properties of the two-dimensional t-J model in the parameter regime relevant to cuprate high-temperature superconductors are investigated using cluster perturbation theory. Various anomalous features observed in…

强关联电子 · 物理学 2015-08-20 Masanori Kohno

Unravelling competing orders emergent in doped Mott insulators and their interplay with unconventional superconductivity is one of the major challenges in condensed matter physics. To explore possible superconductivity state in the doped…

强关联电子 · 物理学 2021-09-01 Shoushu Gong , W. Zhu , D. N. Sheng

We apply the recently developed slave fermion approach to study the doped Mott insulator in the one-band Hubbard and Hubbard-Heisenberg models. Our results produce several subtle features in the electron spectra and confirm the key role of…

强关联电子 · 物理学 2023-10-19 Zhuoqing Long , Jiangfan Wang , Yi-feng Yang

We study the crossover from the one-dimensional to the two-dimensional Hubbard model in the photoemission spectra of weakly coupled chains. The chains with on-site repulsion are treated using the spin-charge factorized wave function, that…

强关联电子 · 物理学 2011-07-19 P. Ribeiro , P. D. Sacramento , K. Penc

How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-$T_c$ cuprates, we study the…

The physics of doped Mott insulators is at the heart of strongly correlated materials and is believed to constitute an essential ingredient for high-temperature superconductivity. In systems with higher SU(N) spin symmetries, even richer…

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