相关论文: Room-temperature magnetic p-n junctions for charge…

We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge…

The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…

A new proposal is given to design a spin half-adder in a nano-junction. It is well known that at finite voltage a net circulating current (known as circular current) appears within a mesoscopic ring under asymmetric ring-to-electrode…

The prediction and realization of magnetic excitations driven by electrical currents via the spin transfer torque effect, enables novel magnetic nano-devices where spin-waves can be used to process and store information. The functional…

We study the charge and spin Seebeck effects in a spin-1 molecular junction as a function of temperature (T), applied magnetic field (H), and magnetic anisotropy (D) using Wilson's numerical renormalization group. A hard-axis magnetic…

Diamond and many newly emerged semiconductor materials show outstanding optical and magnetic properties. However, they cannot be as efficiently doped as silicon or gallium arsenide, which limits their practical applicability. Here, we…

We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n…

The magnetic properties of the diluted magnetic semiconductor Ga_{1-x}Mn_{x}As are studied within the dynamical cluster approximation. We use the k-dot-p Hamiltonian to describe the electronic structure of GaAs with spin-orbit coupling and…

Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and…

Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I…

Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This…

We use spin-torque resonance to probe simultaneously and separately the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Thanks to the large associated resistance variations we are able to…

We present experimental evidence and physics-based simulations of the lock-on effect in high-voltage GaAs avalanche diodes. The avalanche triggering is initiated by steep voltage ramp applied to the diode and in-series 50 Ohm load. After…

We demonstrate a room temperature spin dynamo where the precession of electron spins in ferromagnets driven by microwaves manifests itself in a collective way by generating d.c. currents. The current/power ratio is at least three orders of…

Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the…

An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5…

We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of…

Nonlinear devices, such as transistors, enable contemporary computing technologies. We theoretically investigate nonlinear effects, bearing a high fundamental scientific and technical relevance, in magnonics with emphasis on…

Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here we propose a corresponding device in spintronics: the spin-current diode, in…

Ultrawide bandgap semiconductor technologies offer potentially revolutionary advances in the rapidly developing areas of quantum communication, short wavelength optics, smart energy conversion and biomedical interfaces. These strongly…